Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea.
Microsc Microanal. 2013 Aug;19 Suppl 5:145-8. doi: 10.1017/S143192761301252X.
The growth of high-quality indium (In)-rich In(X)Ga(1-X)N alloys is technologically important for applications to attain highly efficient green light-emitting diodes and solar cells. However, phase separation and composition modulation in In-rich In(X )Ga(1-X)N alloys are inevitable phenomena that degrade the crystal quality of In-rich In(X)Ga(1-X)N layers. Composition modulations were observed in the In-rich In(X)Ga(1-X)N layers with various In compositions. The In composition modulation in the In X Ga1-X N alloys formed in samples with In compositions exceeding 47%. The misfit strain between the InGaN layer and the GaN buffer retarded the composition modulation, which resulted in the formation of modulated regions 100 nm above the In(0.67)Ga(0.33)N/GaN interface. The composition modulations were formed on the specific crystallographic planes of both the {0001} and {0114} planes of InGaN.
高质量的富铟（In）In(X)Ga(1-X)N 合金的生长对于实现高效绿光发光二极管和太阳能电池的应用具有重要的技术意义。然而，富铟 In(X)Ga(1-X)N 合金中的相分离和成分调制是不可避免的现象，会降低富铟 In(X)Ga(1-X)N 层的晶体质量。在各种铟成分的富铟 In(X)Ga(1-X)N 层中观察到了成分调制。在铟成分超过 47%的样品中形成了 In X Ga1-X N 合金中的铟成分调制。InGaN 层和 GaN 缓冲层之间的失配应变阻碍了成分调制，导致在 In(0.67)Ga(0.33)N/GaN 界面上方 100nm 处形成调制区域。成分调制形成于 InGaN 的{0001}和{0114}面的特定晶面。
