Theoretical Physics and Center for Interdisciplinary, Nanostructure Science and Technology (CINSaT), University of Kassel, Heinrich-Plett-Str. 40, 34132, Kassel, Germany.
Adv Mater. 2013 Oct 18;25(39):5605-8. doi: 10.1002/adma201302559. Epub 2013 Aug 7.
Microscopic processes leading to ultrafast laser-induced melting of silicon are investigated by large-scale ab initio molecular dynamics simulations. Before becoming a liquid, the atoms are shown to be fractionally diffusive, which is a property that has so far been observed in crowded fluids consisting of large molecules. Here, it is found to occur in an elemental semiconductor.
通过大规模的从头算分子动力学模拟研究了导致超快激光诱导硅熔化的微观过程。在变成液体之前，原子被显示出具有分数扩散性，这种性质迄今为止仅在由大分子组成的拥挤流体中观察到过。而在这里，它被发现在元素半导体中出现。
