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利用晶体剪切降低晶格热导率:火花等离子烧结 Magnéli 相 WO2.90 和 WO2.722 的高温热电特性。

Using crystallographic shear to reduce lattice thermal conductivity: high temperature thermoelectric characterization of the spark plasma sintered Magnéli phases WO2.90 and WO2.722.

机构信息

Institut für Anorganische Chemie und Analytische Chemie der Johannes Gutenberg-Universität, Duesbergweg 10-14, D-55099 Mainz, Germany.

出版信息

Phys Chem Chem Phys. 2013 Oct 7;15(37):15399-403. doi: 10.1039/c3cp52361f.

Abstract

Engineering of nanoscale structures is a requisite for controlling the electrical and thermal transport in solids, in particular for thermoelectric applications that require a conflicting combination of low thermal conductivity and low electrical resistivity. We report the thermoelectric properties of spark plasma sintered Magnéli phases WO2.90 and WO2.722. The crystallographic shear planes, which are a typical feature of the crystal structures of Magnéli-type metal oxides, lead to a remarkably low thermal conductivity for WO2.90. The figures of merit (ZT = 0.13 at 1100 K for WO2.90 and 0.07 at 1100 K for WO2.722) are relatively high for tungsten-oxygen compounds and metal oxides in general. The electrical resistivity of WO2.722 shows a metallic behaviour with temperature, while WO2.90 has the characteristics of a heavily doped semiconductor. The low thermopower of 80 μV K(-1) at 1100 K for WO2.90 is attributed to its high charge carrier concentration. The enhanced thermoelectric performance for WO2.90 compared to WO2.722 originates from its much lower thermal conductivity, due to the presence of crystallographic shear and dislocations in the crystal structure. Our study is a proof of principle for the development of efficient and low-cost thermoelectric materials based on the use of intrinsically nanostructured materials rather than artificially structured layered systems to reduce lattice thermal conductivity.

摘要

纳米结构的工程是控制固体中电输运和热输运的必要条件,特别是对于需要低导热率和低电阻率的矛盾组合的热电应用。我们报告了火花等离子烧结 Magnéli 相 WO2.90 和 WO2.722 的热电性能。晶间剪切面是 Magnéli 型金属氧化物晶体结构的典型特征,导致 WO2.90 的热导率显著降低。在 1100 K 时,WO2.90 的品质因数(ZT = 0.13)和 WO2.722 的品质因数(ZT = 0.07)对于钨-氧化合物和金属氧化物来说相对较高。WO2.722 的电阻率随温度表现出金属行为,而 WO2.90 具有掺杂半导体的特性。WO2.90 在 1100 K 时的低热功率为 80 μV K(-1),这归因于其高载流子浓度。与 WO2.722 相比,WO2.90 的热电性能得到增强,这是由于其晶体结构中存在晶间剪切和位错,导致其热导率大大降低。我们的研究证明了基于使用固有纳米结构材料而不是人为结构层状系统来降低晶格热导率来开发高效和低成本热电材料的原理。

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