Li Yunfei, Hao Yuying, Li Wenlian, Yuan Shuqing, Liu Huihui, Cui Yanxia, Wang Hua, Xu Bingshe, Huang Wei
College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China.
Opt Express. 2013 Jul 15;21(14):17020-7. doi: 10.1364/OE.21.017020.
Long working lifetime and high efficient phosphorescent organic light-emitting diode (PHOLED) in which mixed host composed of wide-band-gap based 4, 7-diphenyl-1, 10-phenanthroline (Bphen) and (4,4'-bis(carbazol-9-yl)-biphenyl) (CBP) was demonstrated. The PHOLED with structure of ITO/MoO(3)/CBP:MoO(3) (15 v%, 30 nm)/CBP(10 nm)/([50v%:50v% CBP:Bphen]: 6v% Ir(ppy)(3))(30 nm)/Bphen (40 nm)/LiF (1 nm)/Al offers a peak power efficiency of 41.6 lm/W (a peak current efficiency of 39.8 cd/A)) at a low driving voltage of 3 V which increases by 55% and 27% compared to that of corresponding single-host (SH) and double emitting layer (DML) devices, respectively. Especially very long work lifetime (3530 hs) at an initial luminance of 500 cd/m(2) of the mixed hosted device is exhibited, rising by about 4.1 and 2.46 times relative to that of corresponding SH and DML devices. High efficiency and longer working lifetime was attributed to the absence of heterojunction and balanced charge carrier transport characteristics in the mixed host based OLED structure. The more detail mechanism was also presented.
展示了一种长工作寿命且高效的磷光有机发光二极管（PHOLED），其中混合主体由基于宽带隙的4,7-二苯基-1,10-菲咯啉（Bphen）和（4,4'-双（咔唑-9-基）-联苯）（CBP）组成。具有ITO/MoO(3)/CBP:MoO(3)（15 v%，30 nm）/CBP（10 nm）/（[50v%:50v% CBP:Bphen]: 6v% Ir(ppy)(3)）（30 nm）/Bphen（40 nm）/LiF（1 nm）/Al结构的PHOLED在3 V的低驱动电压下提供了41.6 lm/W的峰值功率效率（峰值电流效率为39.8 cd/A），与相应的单主体（SH）和双发射层（DML）器件相比，分别提高了55%和27%。特别地，混合主体器件在初始亮度为500 cd/m(2)时表现出非常长的工作寿命（3530小时），相对于相应的SH和DML器件分别提高了约4.1倍和2.46倍。高效率和更长的工作寿命归因于基于混合主体的OLED结构中不存在异质结以及平衡的电荷载流子传输特性。还介绍了更详细的机理。
