在亚纳多孔硅中合成的氧化钨量子点的能带隙扩展。
Band-gap expansion of tungsten oxide quantum dots synthesized in sub-nano porous silica.
机构信息
Tokyo Metropolitan Industrial Technology Research Institute, 2-4-10 Aomi, Koto-ku, Tokyo 135-0064, Japan.
出版信息
Chem Commun (Camb). 2013 Oct 4;49(76):8477-9. doi: 10.1039/c3cc44264k.
PMID:23938767
Abstract
The band-gap energy tuning of WO3 quantum dots was realized in the range of 2.6 eV (bulk) to 3.7 eV (sub-nano) by precise size control around one nanometer. Newly synthesized sub-nanoporous silicas act as excellent templates. In addition, single-electron reduction of oxygen under UV irradiation is now achievable with WO3.
摘要
通过精确控制在 1 纳米左右的尺寸，实现了 WO3 量子点的能带隙能量调谐，范围为 2.6 eV（体相）至 3.7 eV（亚纳米）。新合成的亚纳米多孔硅作为优异的模板。此外，现在可以在 UV 照射下通过 WO3 实现单电子还原氧。
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