Department of Physics and Engineering Physics, University of Saskatchewan , Saskatoon, Saskatchewan, S7N 5E2, Canada.
J Phys Chem B. 2013 Sep 12;117(36):10658-64. doi: 10.1021/jp405828d. Epub 2013 Aug 29.
Presented here is a study of the molecular self-ordering properties of four bis(phenylethynyl) anthracene based organic semiconductors related to their electronic structure employing X-ray spectroscopy techniques and density functional theory (DFT) calculations. The local molecular order through polarization dependence of C 1s → π* transitions revealed ordered π-stacking nearly perpendicular to the substrate due to van der Waals interactions between alkyl groups. DFT calculations were used to deconvolute the measured electronic structure and examine effects of small changes in molecular geometry in relation to measured charge carrier mobility in top contact field effect transistors. The highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) are found to be conjugated from the anthracene core across the bridging ethynyl groups to the thiophene and phenyl end groups. The inclusion of ethynyl bridges connecting the thiophenes has a twofold effect of both reducing the rotational freedom of this functional group and increasing HOMO/LUMO conjugation across the molecules. These features help create a more rigid upright structure for HB-ant-THT with better molecular orbital conjugation and subsequent higher mobility. With this understanding of how different functional groups interact with an acene core, future synthesis of new materials may be directed toward annealing-free organic semiconducting materials.
本文研究了四种基于联苯乙炔的蒽类有机半导体的分子自组装特性与其电子结构之间的关系,采用了 X 射线光谱技术和密度泛函理论(DFT)计算。通过 C 1s→π*跃迁的极化依赖性揭示了局部分子有序性,由于烷基之间的范德华相互作用,π 堆积几乎垂直于衬底。DFT 计算用于剖析实测电子结构,并研究分子几何形状的微小变化对顶接触场效应晶体管中测得的电荷载流子迁移率的影响。发现最高占据分子轨道(HOMO)和最低未占据分子轨道(LUMO)从蒽核穿过桥联乙炔基团共轭到噻吩和苯基端基。包含连接噻吩的乙炔桥具有双重作用,既降低了该官能团的旋转自由度,又增加了分子间的 HOMO/LUMO 共轭。这些特征有助于为 HB-ant-THT 创造更刚性的直立结构,具有更好的分子轨道共轭,随后具有更高的迁移率。通过了解不同官能团如何与并五苯核心相互作用,未来的新材料合成可能会朝着无退火的有机半导体材料方向发展。