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π-端基对功能化喹啉作为 p 型通道 OFET 性能的影响。

Influence of π-Endcaps on the Performance of Functionalized Quinolines for p-Channel OFETs.

机构信息

Organic Electronics Division, Department of Chemistry, Central University of Tamil Nadu, Thiruvarur, 610 005, India.

Department of Chemistry, Islamiah College, Vaniyambadi, 635 752, India.

出版信息

Macromol Rapid Commun. 2022 Feb;43(3):e2100472. doi: 10.1002/marc.202100472. Epub 2021 Dec 26.

Abstract

This study investigates the influence of aryl and ethynyl linkers as well the effect of various pi-end-groups on the performance of the quinoline-based organic field-effect transistors. A series of new functionalized quinolines with D-π-A-π-D and A-π-A-π-A architectures are designed and synthesized via the Sonagashira cross-coupling reaction. All the new compounds are well characterized and their photophysical properties are studied. The bottom gate-top contact-organic field-effect transistors devices are fabricated using the spin-coating technique. By employing the pre and post-annealing technique, films with uniform surface coverage are obtained. The variation in the end-groups results in versatile packing arrangements which determine their good charge transport properties. The p-channel transistor behavior is observed for all the new compounds. Among the molecules studied, methoxyphenyl and thiophen-2-yl terminal functionalized with D-π-A-π-D architecture exhibit the higher p-channel transistor characteristics with hole mobilities of 1.39 and 1.33 cm V s , respectively. The good charge carrier mobilities are supported by an electron-donating methoxy group and thiophene as the end-groups with high highest occupied molecular orbitals (HOMO) and lowest unoccupied molecular orbitals (LUMO) levels, extensive π-conjugation, and better self-assembly.

摘要

本研究考察了芳基和乙炔基连接基以及各种π-末端基团对基于喹啉的有机场效应晶体管性能的影响。通过 Sonagashira 交叉偶联反应,设计并合成了一系列具有 D-π-A-π-D 和 A-π-A-π-A 结构的新型官能化喹啉。所有新化合物都经过了很好的表征,并研究了它们的光物理性质。采用旋涂技术制备底栅顶接触有机场效应晶体管器件。通过采用预和后退火技术,获得了具有均匀表面覆盖的薄膜。末端基团的变化导致了多样化的堆积排列,从而决定了它们良好的电荷输运性能。所有新化合物均表现出 p 通道晶体管行为。在所研究的分子中,具有 D-π-A-π-D 结构的甲氧基苯基和噻吩-2-基末端功能化的化合物表现出较高的 p 通道晶体管特性,空穴迁移率分别为 1.39 和 1.33 cm V s 。良好的电荷载流子迁移率得到了电子供体甲氧基和噻吩作为末端基团的支持,它们具有较高的最高占据分子轨道(HOMO)和最低未占据分子轨道(LUMO)能级、广泛的π 共轭和更好的自组装。

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