原子层沉积生长的 Al₂O₃/SrTiO₃ 异质结构中自限电子密度的起源-氧扩散模型。
Origin of the self-limited electron densities at Al₂O₃/SrTiO₃ heterostructures grown by atomic layer deposition - oxygen diffusion model.
机构信息
Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA.
出版信息
Nanoscale. 2013 Oct 7;5(19):8940-4. doi: 10.1039/c3nr03082b. Epub 2013 Aug 20.
PMID:23958890
Abstract
Recently, 2-dimensional electron gas (2-DEG) was discovered at the interface of Al₂O₃/SrTiO₃ (STO) heterostructures, in which the amorphous Al₂O₃ layers were grown by atomic layer deposition (ALD). The saturated electron density at the Al₂O₃/STO heterostructures above the critical thickness of Al₂O₃ is explained by an oxygen diffusion mechanism.
摘要
最近，在 Al₂O₃/SrTiO₃（STO）异质结构的界面处发现了二维电子气（2-DEG），其中非晶态 Al₂O₃ 层是通过原子层沉积（ALD）生长的。在 Al₂O₃ 的临界厚度以上的 Al₂O₃/STO 异质结构中，饱和电子密度可以通过氧扩散机制来解释。
Zotero 插件