Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA.
Nanoscale. 2013 Oct 7;5(19):8940-4. doi: 10.1039/c3nr03082b. Epub 2013 Aug 20.
Recently, 2-dimensional electron gas (2-DEG) was discovered at the interface of Al₂O₃/SrTiO₃ (STO) heterostructures, in which the amorphous Al₂O₃ layers were grown by atomic layer deposition (ALD). The saturated electron density at the Al₂O₃/STO heterostructures above the critical thickness of Al₂O₃ is explained by an oxygen diffusion mechanism.
最近，在 Al₂O₃/SrTiO₃（STO）异质结构的界面处发现了二维电子气（2-DEG），其中非晶态 Al₂O₃ 层是通过原子层沉积（ALD）生长的。在 Al₂O₃ 的临界厚度以上的 Al₂O₃/STO 异质结构中，饱和电子密度可以通过氧扩散机制来解释。
