Department of Physics, University at Buffalo , Buffalo, New York 14260-1500, United States.
Nano Lett. 2013 Sep 11;13(9):4305-10. doi: 10.1021/nl4020777. Epub 2013 Aug 26.
We investigate energy relaxation of hot carriers in monolayer and bilayer graphene devices, demonstrating that the relaxation rate increases significantly as the Dirac point is approached from either the conduction or valence band. This counterintuitive behavior appears consistent with ideas of charge puddling under disorder, suggesting that it becomes very difficult to excite carriers out of these localized regions. These results therefore demonstrate how the peculiar properties of graphene extend also to the behavior of its nonequilibrium carriers.
我们研究了单层和双层石墨烯器件中热载流子的能量弛豫，结果表明，无论狄拉克点是从导带还是价带接近，弛豫率都会显著增加。这种违反直觉的行为似乎与无序下的电荷池化的想法一致，表明很难将载流子从这些局域区域中激发出来。因此，这些结果表明了石墨烯的特殊性质如何也延伸到了其非平衡载流子的行为。
