化学气相沉积生长的悬浮和支撑单层石墨烯中的热输运。

Thermal transport in suspended and supported monolayer graphene grown by chemical vapor deposition.

机构信息

Department of Mechanical Engineering and Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712, USA.

出版信息

Nano Lett. 2010 May 12;10(5):1645-51. doi: 10.1021/nl9041966.

DOI:10.1021/nl9041966

PMID:20405895

Abstract

Graphene monolayer has been grown by chemical vapor deposition on copper and then suspended over a hole. By measuring the laser heating and monitoring the Raman G peak, we obtain room-temperature thermal conductivity and interface conductance of (370 + 650/-320) W/m K and (28 + 16/-9.2) MW/m(2) K for the supported graphene. The thermal conductivity of the suspended graphene exceeds (2500 + 1100/-1050) W/m K near 350 K and becomes (1400 + 500/-480) W/m K at about 500 K.

摘要

通过化学气相沉积在铜上生长石墨烯单层，然后将其悬浮在孔上方。通过测量激光加热和监测拉曼 G 峰，我们获得了（370 + 650/-320）W/mK 和（28 + 16/-9.2）MW/m2K 的室温热导率和界面电导对于支撑的石墨烯。悬浮石墨烯的热导率在 350 K 附近超过（2500 + 1100/-1050）W/mK，在约 500 K 时变为（1400 + 500/-480）W/mK。