Department of Physics, Graduate School of Science, Kyoto University, Kyoto 606-8502, Japan.
Phys Rev Lett. 2013 Aug 9;111(6):067401. doi: 10.1103/PhysRevLett.111.067401. Epub 2013 Aug 6.
Intense terahertz (THz) pulse induces photoluminescence (PL) flash from undoped high-quality GaAs/AlGaAs quantum wells under continuous wave laser excitation. The number of excitons increases 10,000-fold from that of the steady state under only laser excitation. The THz electric field dependence and the relaxation dynamics of the PL flash intensity suggest that the strong electric field of the THz pulse ionizes impurity states during the 1 ps period of the THz pulse and release carriers from a giant reservoir containing impurity states in the AlGaAs layers.
强太赫兹（THz）脉冲在连续波激光激发下，从未掺杂的高质量 GaAs/AlGaAs 量子阱中诱导出光致发光（PL）闪光。在仅激光激发下，激子数量增加了 10000 倍。PL 闪光强度的太赫兹电场依赖性和弛豫动力学表明，THz 脉冲的强电场在 THz 脉冲的 1 ps 期间使杂质态电离，并从包含 AlGaAs 层中杂质态的巨大势阱中释放出载流子。
