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用于测量介观量子系统的片上太赫兹光谱技术。

On-chip terahertz spectroscopic techniques for measuring mesoscopic quantum systems.

作者信息

Wood C D, Mistry D, Li L H, Cunningham J E, Linfield E H, Davies A G

机构信息

School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom.

出版信息

Rev Sci Instrum. 2013 Aug;84(8):085101. doi: 10.1063/1.4816736.

Abstract

We present the self-aligned fabrication of on-chip devices in which waveguides, incorporating integrated photoconductive switches, are combined with two-dimensional electron systems to allow probing of the ultrafast (terahertz frequency range) properties of confined semiconductor systems, both at cryogenic temperatures and in high magnetic fields. We demonstrate the direct injection of on-chip terahertz pulses into the mesoscopic system by femtosecond, near infra-red laser excitation of in-plane photoconductive switches formed on an epitaxially grown, low-temperature GaAs layer, which is integrated monolithically with a GaAs∕AlGaAs heterostructure containing a two-dimensional electron system. Both the input and output terahertz signals of an on-chip waveguide are sampled by altering dynamically the photoconductive excitation∕detection arrangement in situ on a single device. We also demonstrate a new method for sub-Kelvin excitation and detection of on-chip terahertz frequency radiation in a (3)He∕(4)He dilution refrigerator that allows the photocurrent and detected terahertz transient to be mapped as function of the near-infrared excitation position at the emitter and the detector, respectively. Furthermore, we demonstrate transmission of terahertz transients through a two-dimensional electron system in a coplanar waveguide under magnetic field at temperatures as low as 200 mK.

摘要

我们展示了片上器件的自对准制造方法,其中包含集成光电导开关的波导与二维电子系统相结合,以实现对受限半导体系统在低温温度和高磁场下的超快(太赫兹频率范围)特性进行探测。我们通过飞秒近红外激光激发在外延生长的低温砷化镓层上形成的面内光电导开关,证明了将片上太赫兹脉冲直接注入介观系统,该低温砷化镓层与包含二维电子系统的砷化镓/铝镓砷异质结构单片集成。通过在单个器件上原位动态改变光电导激发/检测装置,对片上波导的输入和输出太赫兹信号进行采样。我们还展示了一种在(3)He/(4)He稀释制冷机中对片上太赫兹频率辐射进行亚开尔文激发和检测的新方法,该方法允许分别将光电流和检测到的太赫兹瞬态映射为发射极和探测器处近红外激发位置的函数。此外,我们展示了太赫兹瞬态在低至200 mK温度下通过磁场中共面波导中的二维电子系统的传输。

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