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连续噻吩环化方法合成具有[1]苯并噻吩[3,2-b][1]苯并噻吩(BTBT)结构的π-扩展噻吩并[3,2-b]噻吩基有机半导体。

Consecutive thiophene-annulation approach to π-extended thienoacene-based organic semiconductors with [1]benzothieno[3,2-b][1]benzothiophene (BTBT) substructure.

机构信息

Emergent Molecular Function Research Group, RIKEN Center for Emergent Matter Science (CEMS) , Wako, Saitama 351-0198, Japan.

出版信息

J Am Chem Soc. 2013 Sep 18;135(37):13900-13. doi: 10.1021/ja406257u. Epub 2013 Sep 6.

Abstract

We describe a new synthetic route to the [1]benzothieno[3,2-b][1]benzothiophene (BTBT) substructure featuring two consecutive thiophene-annulation reactions from o-ethynyl-thioanisole substrates and arylsulfenyl chloride reagents that can be easily derived from arylthiols. The method is particularly suitable for the synthesis of unsymmetrical derivatives, e.g., [1]benzothieno[3,2-b]naphtho[2,3-b]thiophene, [1]benzothieno[3,2-b]anthra[2,3-b]thiophene, and naphtho[3,2-b]thieno[3,2-b]anthra[2,3-b]thiophene, a selenium-containing derivative, [1]benzothieno[3,2-b][1]benzoselenophene. It also allows us to access largely π-extended derivatives with two BTBT substructures, e.g., bis[1]benzothieno[2,3-d:2',3'-d']benzo[1,2-b:4,5-b']dithiophene and bis[1]benzothieno[2,3-d:2',3'-d']naphtho[2,3-b:6,7-b']dithiophene (BBTNDT). It should be emphasized that these new BTBT derivatives are otherwise difficult to be synthesized. In addition, since various substrates and reagents, o-ethynyl-thioanisoles and arylthiols, respectively, can be combined, the method can be regarded as a versatile tool for the development of thienoacene-based organic semiconductors in this class. Among the newly synthesized materials, highly π-extended BBTNDT afforded very high mobility (>5 cm(2) V(-1) s(-1)) in its vapor-deposited organic field-effect transistors (OFETs), which is among the highest for unsubstituted acene- or thienoacenes-based organic semiconductors. In fact, the structural analyses of BBTNDT both in the single crystal and thin-film state indicated that an interactive two-dimensional molecular array is realized in the solid state, which rationalize the higher carrier mobility in the BBTNDT-based OFETs.

摘要

我们描述了一种新的合成 [1]苯并噻吩[3,2-b][1]苯并噻吩 (BTBT) 结构的方法,该方法通过邻炔基-噻吩基苯甲醚底物和芳基硒磺酰氯试剂进行两个连续的噻吩环化反应,而芳基硒磺酰氯试剂可以很容易地从芳基硫醇衍生得到。该方法特别适合于不对称衍生物的合成,例如 [1]苯并噻吩[3,2-b]萘[2,3-b]噻吩、[1]苯并噻吩[3,2-b]蒽[2,3-b]噻吩和含硒衍生物[1]苯并噻吩[3,2-b][1]苯并硒吩。它还允许我们获得具有两个 BTBT 结构的大量 π 扩展衍生物,例如双[1]苯并噻吩[2,3-d:2',3'-d']苯并[1,2-b:4,5-b']二噻吩和双[1]苯并噻吩[2,3-d:2',3'-d']萘[2,3-b:6,7-b']二噻吩(BBTNDT)。应该强调的是,这些新的 BTBT 衍生物否则难以合成。此外,由于各种底物和试剂,分别为邻炔基-噻吩基苯甲醚和芳基硫醇,可以组合使用,因此该方法可以被视为该类噻吩并类有机半导体发展的多功能工具。在所合成的新材料中,高度扩展的 BBTNDT 在其气相沉积的有机场效应晶体管(OFET)中表现出非常高的迁移率(>5 cm(2) V(-1) s(-1)),这是未取代的并噻吩并类或噻吩并类有机半导体中最高的之一。事实上,BBTNDT 在单晶和薄膜状态下的结构分析表明,在固态中实现了相互作用的二维分子排列,这解释了基于 BBTNDT 的 OFET 中较高的载流子迁移率。

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