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研究基于[1]-苯并噻吩[3,2-b]-[1]-苯并噻二唑二聚体衍生物的有机薄膜晶体管和光晶体管的热稳定性。

Investigating the Thermal Stability of Organic Thin-Film Transistors and Phototransistors Based on [1]-Benzothieno-[3,2-b]-[1]-benzothiophene Dimeric Derivatives.

机构信息

School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen, 518055), P. R. China.

Department of Physics, International Islamic University, Islamabad, 44000), Pakistan.

出版信息

Chemistry. 2018 Nov 7;24(62):16595-16602. doi: 10.1002/chem.201803542. Epub 2018 Oct 17.

Abstract

Two new highly thermally stable [1]benzothieno[3,2-b][1]benzothiophene (BTBT) dimeric derivatives, namely 1,4-bis([1]benzothieno[3,2-b][1]benzothiophene-2-yl)benzene (BTBT-Ph-BTBT) and 4,4'-bis([1]benzothieno[3,2-b][1]benzothiophene-2-yl)-1,1'-biphenyl (BTBT-DPh-BTBT), were synthesized by combining two simple fragment structures. Compared to the monomer compound 2-phenyl[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT, μ =3.4×10  cm  V  s ), the organic thin-film transistors (OTFTs) based on BTBT-Ph-BTBT and BTBT-DPh-BTBT showed significantly higher mobility (up to 2.5 and 3.6 cm  V  s for BTBT-Ph-BTBT and BTBT-DPh-BTBT, respectively). The mobility of OTFTs based on BTBT-Ph-BTBT was kept at a high value (2.4×10  cm  V  s ) after the devices were thermally annealed at 350 °C. Furthermore, the organic phototransistors (OPTs) based on BTBT-Ph-BTBT and BTBT-DPh-BTBT displayed high photosensitivities in a range of 250-400 nm with a low intensity, making these materials potentially applicable for sensitive optoelectronic devices.

摘要

两种新型的高热稳定性 [1]苯并噻吩并[3,2-b][1]苯并噻吩(BTBT)二聚体衍生物,即 1,4-双([1]苯并噻吩并[3,2-b][1]苯并噻吩-2-基)苯(BTBT-Ph-BTBT)和 4,4'-双([1]苯并噻吩并[3,2-b][1]苯并噻吩-2-基)-1,1'-联苯(BTBT-DPh-BTBT),是通过组合两个简单的片段结构合成的。与单体化合物 2-苯基[1]苯并噻吩并[3,2-b][1]苯并噻吩(Ph-BTBT,μ =3.4×10  cm  V  s )相比,基于 BTBT-Ph-BTBT 和 BTBT-DPh-BTBT 的有机薄膜晶体管(OTFT)表现出明显更高的迁移率(BTBT-Ph-BTBT 和 BTBT-DPh-BTBT 分别高达 2.5 和 3.6 cm  V  s )。基于 BTBT-Ph-BTBT 的 OTFT 的迁移率在器件在 350°C 下进行热退火后仍保持在较高值(2.4×10  cm  V  s )。此外,基于 BTBT-Ph-BTBT 和 BTBT-DPh-BTBT 的有机光电晶体管(OPTs)在低强度下在 250-400nm 的范围内表现出高的光敏性,使这些材料有望应用于敏感的光电设备。

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