Samsung Advanced Institute of Technology, Samsung Electronics Co, Yongin-Si, Gyeonggi-Do, 446-712, Republic of Korea.
Adv Mater. 2013 Oct 18;25(39):5549-54. doi: 10.1002/adma201301102. Epub 2013 Aug 27.
A gate-modulated nanowire oxide photosensor is fabricated by electron-beam lithography and conventional dry etch processing.. The device characteristics are good, including endurance of up to 10(6) test cycles, and gate-pulse excitation is used to remove persistent photoconductivity. The viability of nanowire oxide phototransistors for high speed and high resolution applications is demonstrated, thus potentially expanding the scope of exploitation of touch-free interactive displays.
通过电子束光刻和传统的干法刻蚀工艺，制作了栅极调制的纳米线氧化物光电传感器。器件性能良好，包括高达 10^6 次测试循环的耐久性，并且使用栅极脉冲激励来消除持久光电导。纳米线氧化物光电晶体管在高速和高分辨率应用中的可行性得到了证明，从而有可能扩大免触摸交互式显示器的应用范围。
