State Key Laboratory of Luminescent Materials and Devices , South China University of Technology , Guangzhou 510640 , China.
Guangzhou New Vision Optoelectronic Corporation, Limited , Guangzhou 510530 , China.
ACS Appl Mater Interfaces. 2019 Feb 6;11(5):5232-5239. doi: 10.1021/acsami.8b18329. Epub 2019 Jan 25.
Praseodymium-doped indium zinc oxide (PrIZO) has been employed as the channel layer of thin-film transistors (TFTs). The TFTs with Pr doping exhibited a remarkable suppression of the light-induced instability. A negligible photo-response and remarkable enhancement in negative gate bias stress under illumination (NBIS) were achieved in the PrIZO-TFTs. Meanwhile, the PrIZO-TFTs showed reasonable characteristics with a high-field-effect mobility of 26.3 cm/V s, SS value of 0.28 V/decade, and I/ I ratio of 10. X-ray photoelectron spectroscopy, microwave photoconductivity decay, and photoluminescence spectra were employed to analyze the effects of the Pr concentrations on the performance of PrIZO-TFTs. We disclosed that acceptor-like trap states induced by Pr ions might lead to the suppression of photo-induced carrier in conduction band, which is a new strategy for improving illumination stability of amorphous oxide semiconductors. Finally, a prototype of fully transparent AMOLED display was successfully fabricated to demonstrate the potential of Pr-doping TFTs applied in transparent devices.
掺镨氧化锌（PrIZO）已被用作薄膜晶体管（TFT）的沟道层。掺镨的 TFT 表现出对光致不稳定的显著抑制。在 PrIZO-TFT 中，观察到光响应可忽略和在光照下负栅极偏压应力（NBIS）下的显著增强。同时，PrIZO-TFT 表现出合理的特性，具有 26.3 cm/V s 的高场效应迁移率、0.28 V/decade 的 SS 值和 10 的 I/ I 比。X 射线光电子能谱、微波光电导衰减和光致发光光谱用于分析 Pr 浓度对 PrIZO-TFT 性能的影响。我们揭示了由 Pr 离子引起的类受主陷阱态可能导致导带中光致载流子的抑制，这是提高非晶氧化物半导体照明稳定性的一种新策略。最后，成功制备了全透明 AMOLED 显示器原型，以展示应用于透明器件的掺镨 TFT 的潜力。
