Key Laboratory for Special Functional Materials of Ministry of Education, Henan University , Kaifeng 475004, People's Republic of China.
Nano Lett. 2013 Nov 13;13(11):5046-50. doi: 10.1021/nl401941g. Epub 2013 Oct 2.
We present successful fabrication of single n-ZnO/p-AlGaN heterojunction nanowires with excellent optoelectronic properties. Because of the formation of high-quality interfacial structure, heterojunction nanowire showed a diodelike rectification behavior and an electroluminescence (EL) ultraviolet (UV) emission centered at 394 nm from a single nanowire was observed when the injection current is 4 μA due to high exciton efficiency in the interfacial layer between ZnO and AlGaN. With the increase of the applied current, the EL peak at 5 μA becomes weaker revealing an optimal injection current of less than 5 μA. These results are expected to open up new application possibilities in nanoscale UV light-emitting devices based on single ZnO heterostructure.
我们成功制备出具有优异光电性能的单根 n-ZnO/p-AlGaN 异质结纳米线。由于形成了高质量的界面结构，异质结纳米线表现出类似二极管的整流行为，并且当注入电流为 4 μA 时，由于 ZnO 和 AlGaN 界面层中的高激子效率，从单个纳米线观察到中心位于 394nm 的电致发光（EL）紫外（UV）发射。随着施加电流的增加，在 5 μA 时的 EL 峰变得较弱，表明最佳注入电流小于 5 μA。这些结果有望为基于单根 ZnO 异质结构的纳米级紫外发光器件开辟新的应用可能性。
