Opt Lett. 2013 Oct 1;38(19):3720-3. doi: 10.1364/OL.38.003720.
We report on the quantitative evidence of simultaneous amplified spontaneous emission from the AlGaInAs/InAs/InP-based quantum-well (Qwell) and quantum-dashes (Qdash) in a multistack dash-in-an-asymmetric-well superluminescent diode heterostructure. As a result, an emission bandwidth (full width at half-maximum) of >700 nm is achieved, covering entire O-E-S-C-L-U communication bands, and a maximum continuous wave output power of 1.3 mW, from this device structure. This demonstration paves a way to bridge entire telecommunication bands through proper optimization of device gain region, bringing significant advances and impact to a variety of cross-disciplinary field applications.
我们报告了基于 AlGaInAs/InAs/InP 的量子阱 (Qwell) 和量子点 (Qdash) 在多堆叠点在非对称阱超辐射二极管异质结构中同时放大自发辐射的定量证据。结果，该器件结构实现了>700nm 的发射带宽（半峰全宽），覆盖整个 O-E-S-C-L-U 通信波段，最大连续波输出功率为 1.3mW。这种演示为通过适当优化器件增益区来连接整个电信波段铺平了道路，为各种跨学科领域的应用带来了重大进展和影响。
