采用调谐高度的 InAs 量子点的超宽带、超辐射发光二极管。

Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height.

机构信息

Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada.

出版信息

Opt Lett. 2012 Mar 15;37(6):1103-5. doi: 10.1364/OL.37.001103.

DOI:10.1364/OL.37.001103

Abstract

An ultrawide-bandwidth, superluminescent light-emitting diode (SLED) utilizing multiple layers of dots of tuned height is reported. Due to thermal effect, the superluminescent phenomenon is observed only under pulse-mode operation. The device exhibits a 3 dB bandwidth of 190 nm with central wavelength of 1020 nm under continuous-wave (cw) conditions. The maximum corresponding output power achieved in this device under cw and pulsed operation conditions are 0.54 mW and 17 mW, respectively.

摘要

本文报道了一种采用多层调高标准点的超宽带、超辐射发光二极管（SLED）。由于热效应，只有在脉冲模式下才能观察到超辐射现象。在连续波（cw）条件下，该器件在中心波长为 1020nm 时具有 190nm 的 3dB 带宽。在连续波和脉冲工作条件下，该器件的最大相应输出功率分别为 0.54mW 和 17mW。