School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China.
Nanoscale Res Lett. 2013 Oct 17;8(1):427. doi: 10.1186/1556-276X-8-427.
In order to clarify the controversies of hardening mechanism for TiN/SiNx-based nanocomposite films, the microstructure and hardness for TiN/SiNx and TiAlN/SiNx nanocomposite films with different Si content were studied. With the increase of Si content, the crystallization degree for two series of films firstly increases and then decreases. The microstructural observations suggest that when SiNx interfacial phase reaches to a proper thickness, it can be crystallized between adjacent TiN or TiAlN nanocrystallites, which can coordinate misorientations between nanocrystallites and grow coherently with them, resulting in blocking of the dislocation motions and hardening of the film. The microstructure of TiN/SiNx-based nanocomposite film can be characterized as the nanocomposite structure with TiN-based nanocrystallites surrounded by crystallized SiNx interfacial phase, which can be denoted by nc-TiN/c-SiNx model ('c' before SiNx means crystallized) and well explain the coexistence between nanocomposite structure and columnar growth structure within the TiN/SiNx-based film.
为了澄清 TiN/SiNx 基纳米复合膜硬化机制的争议,研究了不同 Si 含量的 TiN/SiNx 和 TiAlN/SiNx 纳米复合膜的微观结构和硬度。随着 Si 含量的增加,两系列薄膜的结晶度先增加后降低。微观结构观察表明,当 SiNx 界面相达到适当的厚度时,它可以在相邻的 TiN 或 TiAlN 纳米晶之间结晶,这可以协调纳米晶之间的位错取向,并与其共格生长,从而阻碍位错的运动并使薄膜硬化。TiN/SiNx 基纳米复合膜的微观结构可以用纳米复合结构来描述,其中 TiN 基纳米晶被结晶的 SiNx 界面相包围,这可以用 nc-TiN/c-SiNx 模型表示(SiNx 前的“c”表示结晶),并很好地解释了 TiN/SiNx 基薄膜中纳米复合结构和柱状生长结构的共存。