Dipartimento di Chimica, Università di Torino and NIS-Nanostructured Interfaces and Surfaces-Centre of Excellence, Via P. Giuria 7, 10125 Torino, Italy.
J Chem Phys. 2013 Oct 28;139(16):164101. doi: 10.1063/1.4824442.
We present a fully analytical formulation for calculating Raman intensities of crystalline periodic systems using a local basis set. Numerical differentiation with respect to atomic coordinates and with respect to wavevectors is entirely avoided as is the determination of crystal orbital coefficient derivatives with respect to nuclear displacements. Instead, our method utilizes the orbital energy-weighted density matrix and is based on the self-consistent solution of first- and second-order Coupled Perturbed Hartree-Fock/Kohn-Sham equations for the electronic response to external electric fields at the equilibrium geometry. This method has also been implemented in the Crystal program, which uses a Gaussian type basis set.
我们提出了一种完全解析的公式,用于使用局部基组计算晶体周期性系统的拉曼强度。完全避免了相对于原子坐标和波矢的数值微分,以及相对于核位移的晶体轨道系数导数的确定。相反,我们的方法利用轨道能量加权密度矩阵,并基于对平衡几何形状下外部电场的电子响应的第一和第二阶耦合微扰哈特ree-fock/kohn-sham 方程的自洽解。该方法也已在 crystal 程序中实现,该程序使用高斯型基组。