Alaie Seyedhamidreza, Goettler Drew F, Abbas Khawar, Su Mehmet F, Reinke Charles M, El-Kady Ihab, Leseman Zayd C
Department of Mechanical Engineering, The University of New Mexico, Albuquerque, New Mexico, USA.
Rev Sci Instrum. 2013 Oct;84(10):105003. doi: 10.1063/1.4824076.
A technique based on suspended islands is described to measure the in-plane thermal conductivity of thin films and nano-structured materials, and is also employed for measurements of several samples with a single measurement platform. Using systematic steps for measurements, the characterization of the thermal resistances of a sample and its contacts are studied. The calibration of the contacts in this method is independent of the geometry, size, materials, and uniformity of contacts. To verify the technique, two different Si samples with different thicknesses and two samples of the same SiN(x) wafer are characterized on a single device. One of the Si samples is also characterized by another technique, which verifies the current results. Characterization of the two SiN(x) samples taken from the same wafer showed less than 1% difference in the measured thermal conductivities, indicating the precision of the method. Additionally, one of the SiN(x) samples is characterized and then demounted, remounted, and characterized for a second time. The comparison showed the change in the thermal resistance of the contact in multiple measurements could be as small as 0.2 K/μW, if a similar sample is used.