Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur-721302, India.
Phys Chem Chem Phys. 2013 Dec 28;15(48):20887-93. doi: 10.1039/c3cp53603c.
The paper deals with the fabrication of a p-CuS-n-Si nanocone heterojunction based highly sensitive broad band photodetector. Cone-like one dimensional Si nanostructures formed by metal assisted chemical etching, with superior antireflection characteristics have been used as templates for fabrication of the heterojunction. Covellite CuS material was synthesized by a simple chemical reaction for used as target material for the fabrication of p-CuS-n-Si nanocone heterojunctions via pulsed laser ablation. The effect of surface texturing of Si (cone like nanostructure vs. planar) on spectral photoresponse and detection is reported.
本文研究了基于 p-CuS-n-Si 纳米锥异质结的高灵敏度宽频带光电探测器的制作。采用金属辅助化学刻蚀法制备的具有优异抗反射特性的锥形一维 Si 纳米结构作为异质结的模板。采用简单的化学反应合成了蓝辉铜矿 CuS 材料，用作通过脉冲激光烧蚀法制备 p-CuS-n-Si 纳米锥异质结的靶材。报道了 Si（锥形纳米结构与平面）表面织构对光谱光响应和检测的影响。
