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血管内皮生长因子-C 增强淋巴管内皮细胞的放射敏感性。

Vascular endothelial growth factor-C enhances radiosensitivity of lymphatic endothelial cells.

机构信息

Department of Radiation Oncology, Massachusetts General Hospital, Harvard Medical School, Cox-7, 100 Blossom St., Boston, MA, 02114, USA.

出版信息

Angiogenesis. 2014 Apr;17(2):419-27. doi: 10.1007/s10456-013-9400-7. Epub 2013 Nov 8.

Abstract

Radiation therapy after lymph node dissection increases the risk of developing painful and incurable lymphedema in breast cancer patients. Lymphedema occurs when lymphatic vessels become unable to maintain proper fluid balance. The sensitivity of lymphatic endothelial cells (LECs) to ionizing radiation has not been reported to date. Here, the radiosensitivity of LECs in vitro has been determined using clonogenic survival assays. The ability of various growth factors to alter LEC radiosensitivity was also examined. Vascular endothelial growth factor (VEGF)-C enhanced radiosensitivity when LECs were treated prior to radiation. VEGF-C-treated LECs exhibited higher levels of entry into the cell cycle at the time of radiation, with a greater number of cells in the S and G2/M phases. These LECs showed higher levels of γH2A.X-an indicator of DNA damage-after radiation. VEGF-C did not increase cell death as a result of radiation. Instead, it increased the relative number of quiescent LECs. These data suggest that abundant VEGF-C or lymphangiogenesis may predispose patients to radiation-induced lymphedema by impairing lymphatic vessel repair through induction of LEC quiescence.

摘要

淋巴结清扫术后的放射治疗会增加乳腺癌患者发生疼痛且无法治愈的淋巴水肿的风险。当淋巴管无法维持适当的液体平衡时,就会发生淋巴水肿。迄今为止,尚未有报道称淋巴内皮细胞(LEC)对电离辐射敏感。在这里,使用集落形成存活测定法确定了体外 LEC 的放射敏感性。还检查了各种生长因子改变 LEC 放射敏感性的能力。血管内皮生长因子(VEGF)-C 在辐射前处理 LEC 时可增强放射敏感性。用 VEGF-C 处理的 LEC 在辐射时进入细胞周期的比例更高,S 和 G2/M 期的细胞数量更多。这些 LEC 在辐射后显示出更高水平的 γH2A.X-一种 DNA 损伤的标志物。VEGF-C 不会因辐射而增加细胞死亡。相反,它增加了静止 LEC 的相对数量。这些数据表明,丰富的 VEGF-C 或淋巴管生成可能会通过诱导 LEC 静止来损害淋巴管修复,从而使患者易患放射诱导的淋巴水肿。

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