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石房蛤毒素和河豚毒素。小龙虾轴突中静电对钠通道门控电流的影响。

Saxitoxin and tetrodotoxin. Electrostatic effects on sodium channel gating current in crayfish axons.

作者信息

Heggeness S T, Starkus J G

出版信息

Biophys J. 1986 Mar;49(3):629-43. doi: 10.1016/S0006-3495(86)83690-6.

Abstract

The effects of extracellular saxitoxin (STX) and tetrodotoxin (TTX) on gating current (IgON) were studied in voltage clamped crayfish giant axons. At a holding potential (VH) of -90 mV, integrated gating charge (QON) was found to be 56% suppressed when 200 nM STX was added to the external solution, and 75% suppressed following the addition of 200 nM TTX. These concentrations of toxin are sufficiently high to block greater than 99% of sodium channels. A smaller suppression of IgON was observed when 1 nM STX was used (KD = 1-2 nM STX). The suppression of IgON by external toxin was found to be hold potential dependent, with only minimal suppression observed at the most hyperpolarized hold potentials, -140 to -120 mV. The maximal effect of these toxins on IgON was observed at hold potentials where the QON vs. VH plot was found to be steepest, -100 to -80 mV. The suppression of IgON induced by TTX is partially relieved following the removal of fast inactivation by intracellular treatment with N-bromoacetamide (NBA). The effect of STX and TTX on IgON is equivalent to a hyperpolarizing shift in the steady state inactivation curve, with 200 nM STX and 200 nM TTX inducing shifts of 4.9 +/- 1.7 mV and 10.0 +/- 2.1 mV, respectively. Our results are consistent with a model where the binding of toxin displaces a divalent cation from a negatively charged site near the external opening of the sodium channel, thereby producing a voltage offset sensed by the channel gating apparatus.

摘要

在电压钳制的小龙虾巨轴突中研究了细胞外石房蛤毒素(STX)和河豚毒素(TTX)对门控电流(IgON)的影响。在-90 mV的钳制电位(VH)下,当向外部溶液中加入200 nM STX时,发现积分门控电荷(QON)被抑制了56%,加入200 nM TTX后被抑制了75%。这些毒素浓度足够高,足以阻断超过99%的钠通道。当使用1 nM STX(KD = 1 - 2 nM STX)时,观察到IgON的抑制作用较小。发现外部毒素对IgON的抑制作用取决于钳制电位,在最超极化的钳制电位-140至-120 mV时仅观察到最小的抑制作用。在QON与VH的关系曲线最陡的钳制电位-100至-80 mV处,观察到这些毒素对IgON的最大作用。在用N-溴乙酰胺(NBA)进行细胞内处理消除快速失活后,TTX诱导的IgON抑制作用部分得到缓解。STX和TTX对IgON的作用相当于稳态失活曲线的超极化位移,200 nM STX和200 nM TTX分别诱导4.9 +/- 1.7 mV和10.0 +/- 2.1 mV的位移。我们的结果与一个模型一致,即毒素的结合从钠通道外部开口附近的带负电位点取代了二价阳离子,从而产生通道门控装置感知到的电压偏移。

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