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拓扑绝缘体中狄拉克点附近的狄拉克费米子的快照。

Snapshots of Dirac fermions near the Dirac point in topological insulators.

机构信息

Department of Electrophysics and ‡Institute of Physics, National Chiao Tung University , Hsinchu, Taiwan.

出版信息

Nano Lett. 2013;13(12):5797-802. doi: 10.1021/nl4021842. Epub 2013 Nov 26.

Abstract

The recent focus on topological insulators is due to the scientific interest in the new state of quantum matter as well as the technology potential for a new generation of THz optoelectronics, spintronics and quantum computations. It is important to elucidate the dynamics of the Dirac fermions in the topologically protected surface state. Hence we utilized a novel ultrafast optical pump mid-infrared probe to explore the dynamics of Dirac fermions near the Dirac point. The femtosecond snapshots of the relaxation process were revealed by the ultrafast optics. Specifically, the Dirac fermion-phonon coupling strength in the Dirac cone was found to increase from 0.08 to 0.19 while Dirac fermions were away from the Dirac point into higher energy states. Further, the energy-resolved transient reflectivity spectra disclosed the energy loss rate of Dirac fermions at room temperature was about 1 meV/ps. These results are crucial to the design of Dirac fermion devices.

摘要

最近对拓扑绝缘体的关注源于人们对量子物质的新状态的科学兴趣,以及对新一代太赫兹光电子学、自旋电子学和量子计算的技术潜力的关注。阐明拓扑保护表面态中狄拉克费米子的动力学特性非常重要。因此,我们利用一种新颖的超快光泵中红外探针来探索狄拉克点附近狄拉克费米子的动力学特性。超快光学揭示了弛豫过程的飞秒快照。具体来说,在狄拉克点之外进入更高能量状态时,狄拉克锥中的狄拉克费米子-声子耦合强度从 0.08 增加到 0.19。此外,能量分辨的瞬态反射率光谱揭示了室温下狄拉克费米子的能量损失率约为 1 meV/ps。这些结果对于狄拉克费米子器件的设计至关重要。

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