Sim Sangwan, Jang Houk, Koirala Nikesh, Brahlek Matthew, Moon Jisoo, Sung Ji Ho, Park Jun, Cha Soonyoung, Oh Seongshik, Jo Moon-Ho, Ahn Jong-Hyun, Choi Hyunyong
School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea.
Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, USA.
Nat Commun. 2015 Oct 30;6:8814. doi: 10.1038/ncomms9814.
Modulating light via coherent charge oscillations in solids is the subject of intense research topics in opto-plasmonics. Although a variety of methods are proposed to increase such modulation efficiency, one central challenge is to achieve a high modulation depth (defined by a ratio of extinction with/without light) under small photon-flux injection, which becomes a fundamental trade-off issue both in metals and semiconductors. Here, by fabricating simple micro-ribbon arrays of topological insulator Bi2Se3, we report an unprecedentedly large modulation depth of 2,400% at 1.5 THz with very low optical fluence of 45 μJ cm(-2). This was possible, first because the extinction spectrum is nearly zero due to the Fano-like plasmon-phonon-destructive interference, thereby contributing an extremely small denominator to the extinction ratio. Second, the numerator of the extinction ratio is markedly increased due to the photoinduced formation of massive two-dimensional electron gas below the topological surface states, which is another contributor to the ultra-high modulation depth.
通过固体中的相干电荷振荡来调制光,是光等离子体激元学中备受关注的研究课题。尽管人们提出了各种方法来提高这种调制效率,但一个核心挑战是在低光子通量注入下实现高调制深度(由有光/无光时的消光比定义),这在金属和半导体中都是一个基本的权衡问题。在此,通过制备拓扑绝缘体Bi2Se3的简单微带阵列,我们报道了在1.5太赫兹频率下,以45微焦每平方厘米的极低光通量实现了前所未有的2400%的大调制度。这之所以能够实现,首先是因为由于类法诺等离子体 - 声子相消干涉,消光光谱几乎为零,从而使得消光比的分母极小。其次,由于在拓扑表面态下方光致形成大量二维电子气,消光比的分子显著增加,这是实现超高调制深度的另一个因素。