Tyndall National Institute, University College Cork, Lee Maltings, Cork, Ireland.
J Comput Chem. 2014 Jan 30;35(3):244-59. doi: 10.1002/jcc.23491. Epub 2013 Nov 19.
To describe the atomic layer deposition (ALD) reactions of HfO2 from Hf(N(CH3)2)4 and H2O, a three-dimensional on-lattice kinetic Monte-Carlo model is developed. In this model, all atomistic reaction pathways in density functional theory (DFT) are implemented as reaction events on the lattice. This contains all steps, from the early stage of adsorption of each ALD precursor, kinetics of the surface protons, interaction between the remaining precursors (steric effect), influence of remaining fragments on adsorption sites (blocking), densification of each ALD precursor, migration of each ALD precursors, and cooperation between the remaining precursors to adsorb H2O (cooperative effect). The essential chemistry of the ALD reactions depends on the local environment at the surface. The coordination number and a neighbor list are used to implement the dependencies. The validity and necessity of the proposed reaction pathways are statistically established at the mesoscale. The formation of one monolayer of precursor fragments is shown at the end of the metal pulse. Adsorption and dissociation of the H2O precursor onto that layer is described, leading to the delivery of oxygen and protons to the surface during the H2O pulse. Through these processes, the remaining precursor fragments desorb from the surface, leaving the surface with bulk-like and OH-terminated HfO2, ready for the next cycle. The migration of the low coordinated remaining precursor fragments is also proposed. This process introduces a slow reordering motion (crawling) at the mesoscale, leading to the smooth and conformal thin film that is characteristic of ALD.
为了描述 HfO2 的原子层沉积 (ALD) 反应,我们开发了一个基于 Hf(N(CH3)2)4 和 H2O 的三维晶格上的动力学蒙特卡罗模型。在这个模型中,所有密度泛函理论 (DFT) 的原子级反应途径都被实现为晶格上的反应事件。这包括所有步骤,从每个 ALD 前驱体的早期吸附,表面质子的动力学,剩余前驱体之间的相互作用(空间位阻效应),剩余碎片对吸附位的影响(阻塞),每个 ALD 前驱体的致密化,每个 ALD 前驱体的迁移,以及剩余前驱体之间吸附 H2O 的合作(协同效应)。ALD 反应的基本化学取决于表面的局部环境。配位数和邻居列表用于实现这种依赖性。在介观尺度上,通过统计方法验证了所提出的反应途径的有效性和必要性。在金属脉冲结束时,展示了一层前驱体碎片的形成。描述了 H2O 前驱体在该层上的吸附和解离,导致在 H2O 脉冲期间将氧和质子输送到表面。通过这些过程,剩余的前驱体碎片从表面脱附,留下类似于块状和 OH 端基的 HfO2 表面,为下一个循环做好准备。还提出了低配位数剩余前驱体碎片的迁移。这个过程在介观尺度上引入了缓慢的重排运动(爬行),导致 ALD 特有的光滑和保形薄膜。