Suppr超能文献

胶体 CdSe 纳米晶体的光致电子掺杂。

Photochemical electronic doping of colloidal CdSe nanocrystals.

机构信息

Department of Chemistry, University of Washington , Seattle, Washington 98195-1700, United States.

出版信息

J Am Chem Soc. 2013 Dec 18;135(50):18782-5. doi: 10.1021/ja410825c. Epub 2013 Dec 3.

Abstract

A method for electronic doping of colloidal CdSe nanocrystals (NCs) is reported. Anaerobic photoexcitation of CdSe NCs in the presence of a borohydride hole quencher, Li[Et3BH], yields colloidal n-type CdSe NCs possessing extra conduction-band electrons compensated by cations deposited by the hydride hole quencher. The photodoped NCs possess excellent optical quality and display the key spectroscopic signatures associated with NC n-doping, including a bleach at the absorption edge, appearance of a new IR absorption band, and Auger quenching of the excitonic photoluminescence. Although stable under anaerobic conditions, these spectroscopic changes are all reversed completely upon exposure of the n-doped NCs to air. Chemical titration of the added electrons confirms previous correlations between absorption bleach and electron accumulation and provides a means of quantifying the extent of electron trapping in some NCs. The generality of this photodoping method is demonstrated by initial results on colloidal CdE (E = S, Te) NCs as well as on CdSe quantum dot films.

摘要

报道了一种胶体 CdSe 纳米晶(NCs)的电子掺杂方法。在硼氢化物空穴猝灭剂 Li[Et3BH]存在下,对 CdSe NCs 进行厌氧光激发,得到具有额外导带电子的胶体 n 型 CdSe NCs,这些额外的导带电子由氢化物空穴猝灭剂沉积的阳离子补偿。光掺杂的 NCs 具有优异的光学质量,并显示出与 NC n 掺杂相关的关键光谱特征,包括吸收边缘的漂白、新的红外吸收带的出现以及激子光致发光的俄歇猝灭。尽管在厌氧条件下稳定,但这些光谱变化在 n 掺杂 NCs 暴露于空气中时完全逆转。添加电子的化学滴定证实了先前吸收漂白与电子积累之间的相关性,并提供了一种量化某些 NCs 中电子俘获程度的方法。该光掺杂方法的通用性通过对胶体 CdE(E = S、Te)NCs 以及 CdSe 量子点薄膜的初步结果得到了证明。

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验