顺磁、等离子体CuFeS半导体纳米晶体中空穴的有效质量
Effective Mass for Holes in Paramagnetic, Plasmonic CuFeS Semiconductor Nanocrystals.
作者信息
Kuszynski Jason E, Kays Joshua C, Conti Carl R, McGill Stephen A, Dennis Allison M, Strouse Geoffrey F
机构信息
Department of Chemistry and Biochemistry, Florida State University, Tallahassee FL 32306, USA.
Department of Biomedical Engineering, Boston University, Boston MA 02215, USA.
出版信息
J Phys Chem C Nanomater Interfaces. 2022 Aug 4;126(30):12669-12679. doi: 10.1021/acs.jpcc.2c03459. Epub 2022 Jul 26.
The impact of a magneto-structural phase transition on the carrier effective mass in CuFeS plasmonic semiconductor nanocrystals was examined using Magnetic Circular Dichroism (MCD). Through MCD, the sample was confirmed as p-type from variable temperature studies from 1.8 - 75 K. Magnetic field dependent behavior is observed, showing an asymptotic behavior at high field with an value 5.98 at 10 T and 2.73 at 2 T. Experimentally obtained results are holistically compared to SQUID magnetization data and DFT results, highlighting a dependency on vacancy driven polaronic coupling, magnetocrystalline anisotropy, and plasmon coupling of the magnetic field all contributing to an overall decrease in the hole mean free path dependent on the magnetic field applied to CuFeS.
利用磁圆二色性（MCD）研究了磁结构相变对CuFeS等离子体半导体纳米晶体中载流子有效质量的影响。通过MCD，从1.8 - 75 K的变温研究中确认样品为p型。观察到磁场依赖行为，在高场下呈现渐近行为，在10 T时的值为5.98，在2 T时为2.73。将实验获得的结果与超导量子干涉仪（SQUID）磁化数据和密度泛函理论（DFT）结果进行了全面比较，突出了对空位驱动的极化子耦合、磁晶各向异性以及磁场的等离子体耦合的依赖性，所有这些都导致了依赖于施加到CuFeS上的磁场的空穴平均自由程的总体减小。
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