School of Electrical Engineering, Korea University, Seoul 136-713, Korea.
Nanoscale Res Lett. 2013 Dec 2;8(1):507. doi: 10.1186/1556-276X-8-507.
We propose a transparent conductive oxide electrode scheme of gallium oxide nanoparticle mixed with a single-walled carbon nanotube (Ga2O3 NP/SWNT) layer for deep ultraviolet light-emitting diodes using spin and dipping methods. We investigated the electrical, optical and morphological properties of the Ga2O3 NP/SWNT layers by increasing the thickness of SWNTs via multiple dipping processes. Compared with the undoped Ga2O3 films (current level 9.9 × 10-9 A @ 1 V, transmittance 68% @ 280 nm), the current level flowing in the Ga2O3 NP/SWNT increased by approximately 4 × 105 times and the transmittance improved by 9% after 15 times dip-coating (current level 4 × 10-4 A at 1 V; transmittance 77.0% at 280 nm). These improvements result from both native high transparency of Ga2O3 NPs and high conductivity and effective current spreading of SWNTs.
我们提出了一种透明导电氧化物电极方案，即使用旋涂和浸渍的方法，将氧化镓纳米粒子与单壁碳纳米管（Ga2O3 NP/SWNT）层混合，用于深紫外发光二极管。我们通过多次浸渍过程来增加 SWNTs 的厚度，从而研究了 Ga2O3 NP/SWNT 层的电学、光学和形态特性。与未掺杂的 Ga2O3 薄膜相比（电流水平为 9.9×10-9 A @ 1 V，在 280nm 处的透光率为 68%），Ga2O3 NP/SWNT 中的电流水平增加了约 4×105 倍，在经过 15 次浸渍涂覆后，透光率提高了 9%（电流水平为 1 V 时为 4×10-4 A；在 280nm 处的透光率为 77.0%）。这些改进是由于 Ga2O3 NPs 的本征高透明度以及 SWNTs 的高导电性和有效的电流扩展。
