Center for Quantum Technologies, National University of Singapore, 117543, Singapore.
J Phys Condens Matter. 2014 Jan 15;26(2):025704. doi: 10.1088/0953-8984/26/2/025704. Epub 2013 Dec 9.
The superconductor-to-insulator transition (SIT) is a phenomenon occurring in highly disordered superconductors and may be useful in the development of superconducting switches. The SIT has been demonstrated to be induced by different external parameters: temperature, magnetic field, electric field, etc. However, the electric field induced SIT (ESIT), which has been experimentally demonstrated for some specific materials, holds particular promise for practical device development. Here, we demonstrate, from theoretical considerations, the occurrence of the ESIT. We also propose a general switching device architecture using the ESIT and study some of its universal behavior, such as the effects of sample size, disorder strength and temperature on the switching action. This work provides a general framework for the development of such a device.
超导-绝缘相变（SIT）是一种发生在高度无序超导体中的现象，可能对超导开关的发展有用。SIT 已被证明可以通过不同的外部参数诱导：温度、磁场、电场等。然而，电场诱导的 SIT（ESIT）已经在一些特定材料中得到了实验验证，对于实际器件的开发具有特殊的前景。在这里，我们从理论上考虑，证明了 ESIT 的发生。我们还提出了一种使用 ESIT 的通用开关器件架构，并研究了其一些通用行为，例如样品尺寸、无序强度和温度对开关动作的影响。这项工作为这种器件的开发提供了一个通用的框架。
