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单晶研究反铁磁 CePd3Al9。

Single crystal study of antiferromagnetic CePd3Al9.

机构信息

Los Alamos National Laboratory, Los Alamos, NM 87545, USA.

出版信息

J Phys Condens Matter. 2014 Jan 15;26(2):025601. doi: 10.1088/0953-8984/26/2/025601. Epub 2013 Dec 10.

DOI:10.1088/0953-8984/26/2/025601
PMID:24326344
Abstract

Single crystal x-ray diffraction, magnetic susceptibility (M), heat capacity (C), and electrical resistivity (ρ) measurements are reported for specimens of the new tetragonal compound CePd3Al9, which forms in a new structure type. X-ray diffraction measurements reveal that the nearest neighbor Ce-Ce distances are large (d(Ce-Ce) = 5.272 Å), suggesting that this compound may be described as a stoichiometric dilute Kondo lattice. Thermodynamic and transport measurements reveal antiferromagnetic order near T(N) = 0.9 K. The ordered ground state emerges from a lattice of localized Ce ions that are weakly hybridized with the conduction electrons, as revealed by the moderate electronic coefficient of the specific heat γ ≈ 45 mJ mol(-1) K(-2) (extrapolated from above T(N)) and the lack of evidence for Kondo coherence in the magnetic susceptibility and electrical resistivity. The application of a magnetic field initially suppresses the magnetic order at a rate of -0.04 K kOe(-1), but Zeeman splitting of the doublet ground state produces a nonmagnetic singlet before TN reaches zero. The data additionally reveal that chemical/structural disorder plays an important role, as evidenced by results from single crystal x-ray diffraction, the broadness of the peak at TN in the heat capacity, and the small residual resistivity ratio RRR = ρ(300 K)/ρ0 = 1.3.

摘要

我们对新四方相化合物 CePd3Al9 的单晶 X 射线衍射、磁化率(M)、比热(C)和电阻率(ρ)进行了测量,该化合物形成了一种新的结构类型。X 射线衍射测量表明最近邻 Ce-Ce 距离较大(d(Ce-Ce) = 5.272 Å),这表明该化合物可被描述为具有化学计量的稀 Kondo 晶格。热力学和输运测量表明在 T(N) ≈ 0.9 K 附近存在反铁磁序。有序基态源自于局域化 Ce 离子的晶格,这些离子与传导电子弱杂交,这一点可由比热的中等电子系数γ≈45 mJ mol(-1) K(-2)(由 T(N)以上的情况推断)以及磁化率和电阻率中没有证据表明存在 Kondo 相干性揭示。磁场的施加最初以 -0.04 K kOe(-1)的速率抑制磁序,但在 TN 降至零时,基态双峰的塞曼分裂产生了非磁性单态。数据还表明,化学/结构无序起着重要作用,这一点可从单晶 X 射线衍射、比热中 TN 处峰的宽度以及较小的剩余电阻率比 RRR = ρ(300 K)/ρ0 = 1.3 中得到证明。

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