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点-体纳米晶的双色电致发光。

Dual-color electroluminescence from dot-in-bulk nanocrystals.

机构信息

Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca , via Cozzi 55, I-20125 Milano, Italy.

出版信息

Nano Lett. 2014 Feb 12;14(2):486-94. doi: 10.1021/nl403478s. Epub 2013 Dec 30.

DOI:10.1021/nl403478s
PMID:24328946
Abstract

The emission color from colloidal semiconductor nanocrystals (NCs) is usually tuned through control of particle size, while multicolor emission is obtained by mixing NCs of different sizes within an emissive layer. Here, we demonstrate that recently introduced "dot-in-bulk" (DiB) nanocrystals can emit two-color light under both optical excitation and electrical injection. We show that the effective emission color can be controlled by adjusting the relative amplitudes of the core and shell emission bands via the intensity of optical excitation or applied bias in the cases of photoluminescence (PL) and electroluminescence (EL), respectively. To investigate the role of nonradiative carrier losses due to trapping at intragap states, we incorporate DiB NCs into functional light-emitting diodes and study their PL as a function of applied bias below the EL excitation threshold. We show that voltage-dependent changes in core and shell emissions are not due to the applied electric field but rather arise from the transfer of charges between the anode and the NC intragap trap sites. The changes in the occupancy of trap states can be described in terms of the raising (lowering) of the Fermi level for reverse (direct) bias. We find that the applied voltage affects the overall PL intensity primarily via the electron-trapping channel while bias-induced changes in hole-trapping play a less significant role, limited to a weak effect on core emission.

摘要

胶体半导体纳米晶体(NCs)的发射颜色通常通过控制粒径来调节,而多色发射则是通过在发射层中混合不同尺寸的 NCs 来实现。在这里,我们证明了最近引入的“点在体”(DiB)纳米晶体可以在光激发和电注入下发出双色光。我们表明,通过调整光激发或施加偏压的强度,可以控制有效发射颜色,从而分别调节核和壳发射带的相对幅度,以实现光致发光(PL)和电致发光(EL)的情况。为了研究由于在带隙态中的俘获导致的非辐射载流子损失的作用,我们将 DiB NCs 掺入功能型发光二极管中,并研究它们在低于 EL 激发阈值的施加偏压下的 PL。我们表明,核和壳发射的电压依赖性变化不是由于施加的电场,而是源于电荷在阳极和 NC 带隙陷阱之间的转移。可以根据费米能级的升高(降低)来描述陷阱态占据的变化,以用于反向(正向)偏压。我们发现,施加电压主要通过电子俘获通道影响整体 PL 强度,而偏压诱导的空穴俘获变化的作用较小,仅限于对核发射的微弱影响。

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