Nanotechnology. 2014 Jan 10;25(1):014015. doi: 10.1088/0957-4484/25/1/014015. Epub 2013 Dec 11.
Semiconductor nanowire arrays are reproducible and rational platforms for the realization of high performing designs of light emitting diodes and photovoltaic devices. In this paper we present an overview of the growth challenges of III-V nanowire arrays obtained by molecular beam epitaxy and the design of III-V nanowire arrays on silicon for solar cells. While InAs tends to grow in a relatively straightforward manner on patterned (111)Si substrates, GaAs nanowires remain more challenging; success depends on the cleaning steps, annealing procedure, pattern design and mask thickness. Nanowire arrays might also be used for next generation solar cells. We discuss the photonic effects derived from the vertical configuration of nanowires standing on a substrate and how these are beneficial for photovoltaics. Finally, due to the special interaction of light with standing nanowires we also show that the Raman scattering properties of standing nanowires are modified. This result is important for fundamental studies on the structural and functional properties of nanowires.
半导体纳米线阵列是实现高性能发光二极管和光伏器件设计的可重复且合理的平台。在本文中，我们概述了通过分子束外延获得的 III-V 纳米线阵列的生长挑战，以及用于太阳能电池的硅上 III-V 纳米线阵列的设计。虽然 InAs 倾向于在图案化的（111）Si 衬底上以相对直接的方式生长，但 GaAs 纳米线仍然更具挑战性；成功取决于清洁步骤、退火程序、图案设计和掩模厚度。纳米线阵列也可用于下一代太阳能电池。我们讨论了源自垂直配置的纳米线在衬底上的光子效应，以及这些如何有益于光伏。最后，由于光与立起的纳米线的特殊相互作用，我们还表明，立起的纳米线的拉曼散射特性被修改。这一结果对于纳米线的结构和功能特性的基础研究非常重要。
