Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA.
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA.
Nat Commun. 2013;4:2950. doi: 10.1038/ncomms3950.
Thinner Si solar cells with higher efficiency can make a Si photovoltaic system a cost-effective energy solution, and nanostructuring has been suggested as a promising method to make thin Si an effective absorber. However, thin Si solar cells with nanostructures are not efficient because of severe Auger recombination and increased surface area, normally yielding <50% EQE with short-wavelength light. Here we demonstrate >80% EQEs at wavelengths from 400 to 800 nm in a sub-10-μm-thick Si solar cell, resulting in 13.7% power conversion efficiency. This significant improvement was achieved with an all-back-contact design preventing Auger recombination and with a nanocone structure having less surface area than any other nanostructures for solar cells. The device design principles presented here balance the photonic and electronic effects together and are an important step to realizing highly efficient, thin Si and other types of thin solar cells.
更薄、效率更高的硅太阳能电池可以使硅光伏系统成为一种具有成本效益的能源解决方案，纳米结构化已被提议作为一种很有前途的方法，使薄硅成为有效的吸收体。然而，由于严重的俄歇复合和增加的表面积，具有纳米结构的薄硅太阳能电池效率不高，通常对短波长光的外部量子效率<50%。在这里，我们在一个厚度小于 10μm 的硅太阳能电池中证明了 400 到 800nm 波长的>80%的 EQE，从而实现了 13.7%的功率转换效率。通过采用全背面接触设计来防止俄歇复合，并采用纳米锥结构，该结构的表面积比任何其他太阳能电池的纳米结构都小，从而实现了这一显著改进。这里提出的器件设计原则平衡了光子和电子效应，是实现高效、薄硅和其他类型薄太阳能电池的重要一步。
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