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用于表面增强拉曼光谱的金纳米颗粒@硅纳米线低聚物阵列:二聚体最佳。

Au Nanoparticles@Si Nanowire Oligomer Arrays for SERS: Dimers Are Best.

作者信息

Bartschmid Theresa, Menath Johannes, Roemling Lukas, Vogel Nicolas, Atalay Furkan, Farhadi Amin, Bourret Gilles R

机构信息

Department of Chemistry and Physics of Materials, University of Salzburg, Jakob Haringer Strasse 2A, A-5020 Salzburg, Austria.

Institute of Particle Technology, Friedrich-Alexander University Erlangen-Nürnberg, Cauerstrasse 4, 91058 Erlangen, Germany.

出版信息

ACS Appl Mater Interfaces. 2024 Aug 7;16(31):41379-41389. doi: 10.1021/acsami.4c10004. Epub 2024 Jul 26.

Abstract

We report the synthesis of vertically aligned silicon nanowire (VA-SiNW) oligomer arrays coated with Au nanoparticle (NP) monolayers via a combination of colloidal lithography, metal-assisted chemical etching, and directed NP assembly. Arrays of SiNW monomers (i.e., isolated NWs), dimers, and tetramers are synthesized, decorated with AuNPs, and tested for their performance in surface-enhanced Raman spectroscopy. The ∼20 nm AuNPs easily enter within the ca. 40 nm gaps of the SiNW oligomers, thus reaching the hot spot region. At 785 nm excitation, the AuNPs@SiNW dimer arrays provide the highest Raman signal, in agreement with electromagnetic simulations showing a high electric field enhancement at the Au/Si interface within the dimer gap region.

摘要

我们报道了通过胶体光刻、金属辅助化学蚀刻和定向纳米粒子组装相结合的方法,合成了涂覆有金纳米粒子(NP)单层的垂直排列硅纳米线(VA-SiNW)低聚物阵列。合成了硅纳米线单体(即孤立的纳米线)、二聚体和四聚体阵列,用金纳米粒子进行修饰,并测试了它们在表面增强拉曼光谱中的性能。约20 nm的金纳米粒子很容易进入硅纳米线低聚物约40 nm的间隙内,从而到达热点区域。在785 nm激发下,金纳米粒子@硅纳米线二聚体阵列提供了最高的拉曼信号,这与电磁模拟结果一致,模拟结果表明在二聚体间隙区域内的金/硅界面处电场增强很高。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c574/11310913/a84be63f8120/am4c10004_0001.jpg

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