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梦境的电生理证据:与快速眼动睡眠期间快速眼动相关的人类脑电位。

Electrophysiological evidence for dreaming: human cerebral potentials associated with rapid eye movement during REM sleep.

作者信息

Miyauchi S, Takino R, Fukuda H, Torii S

出版信息

Electroencephalogr Clin Neurophysiol. 1987 Apr;66(4):383-90. doi: 10.1016/0013-4694(87)90207-0.

DOI:10.1016/0013-4694(87)90207-0
PMID:2435518
Abstract

In order to examine the relationship between rapid eye movement (REM) during REM sleep and dreaming, scalp EEGs (Fz, Cz, Pz and Oz) of 4 normal human subjects, time-locked to REM onset, to saccade onset toward fixation targets and to saccade onset in total darkness, were averaged. The results include the following: Three positive potentials were associated with REM: a sharp potential in the parieto-occipital area just before REM onset; a large, slow potential in the vertex area 140-180 msec after REM onset; and a potential in the occipital area 210-280 msec after REM onset. Three positive potentials, one being the so-called EM-antecedent potential and the others being the lambda response, were associated with the waking saccades toward targets: a sharp potential in the parieto-occipital area just before the saccade onset and two potentials in the occipital area with latencies of 140-150 and 260-310 msec from the saccade onset. Only the EM-antecedent potential appearing just before saccade onset was found in association with saccades in total darkness. The similarities between the 3 positive potentials during REM sleep and the lambda response during wakefulness, and the relationship between those potentials and dreaming, are discussed in terms of the neural processes occurring during REM sleep.

摘要

为了研究快速眼动睡眠(REM)期间的快速眼动(REM)与做梦之间的关系,对4名正常受试者在REM开始、向固定目标的扫视开始以及完全黑暗中的扫视开始时进行时间锁定的头皮脑电图(Fz、Cz、Pz和Oz)进行了平均。结果如下:与REM相关的有三个正电位:REM开始前顶枕区的一个尖峰电位;REM开始后140 - 180毫秒时顶点区的一个大的慢电位;以及REM开始后210 - 280毫秒时枕区的一个电位。与朝向目标的清醒扫视相关的有三个正电位,一个是所谓的扫视前电位,另一个是λ反应:扫视开始前顶枕区的一个尖峰电位以及枕区在扫视开始后潜伏期为140 - 150毫秒和260 - 310毫秒的两个电位。仅在完全黑暗中的扫视中发现了扫视开始前出现的扫视前电位。根据REM睡眠期间发生的神经过程,讨论了REM睡眠期间的三个正电位与清醒时的λ反应之间的相似性,以及这些电位与做梦之间的关系。

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