Micro Device & Machinery Solution Division, Samsung Techwin R&D Center , Seongnam-si, Gyeonggi-do, 463-400, Republic of Korea.
ACS Nano. 2014 Jan 28;8(1):950-6. doi: 10.1021/nn405754d. Epub 2014 Jan 6.
The practical use of graphene in consumer electronics has not been demonstrated since the size, uniformity, and reliability problems are yet to be solved to satisfy industrial standards. Here we report mass-produced graphene films synthesized by hydrogen-free rapid thermal chemical vapor deposition (RT-CVD), roll-to-roll etching, and transfer methods, which enabled faster and larger production of homogeneous graphene films over 400 × 300 mm(2) area with a sheet resistance of 249 ± 17 Ω/sq without additional doping. The properties of RT-CVD graphene have been carefully characterized by high-resolution transmission electron microscopy, Raman spectroscopy, chemical grain boundary analysis, and various electrical device measurements, showing excellent uniformity and stability. In particular, we found no significant correlation between graphene domain sizes and electrical conductivity, unlike previous theoretical expectations for nanoscale graphene domains. Finally, the actual application of the RT-CVD films to capacitive multitouch devices installed in the most sophisticated mobile phone was demonstrated.
由于尺寸、均匀性和可靠性问题尚未解决,无法满足工业标准,因此尚未证明石墨烯在消费电子产品中的实际应用。在这里,我们报告了通过无氢快速热化学气相沉积(RT-CVD)、卷对卷刻蚀和转移方法合成的大规模生产的石墨烯薄膜,该方法能够以更快的速度和更大的面积生产均匀的石墨烯薄膜,面积超过 400×300mm²,方阻为 249±17 Ω/sq,无需额外掺杂。通过高分辨率透射电子显微镜、拉曼光谱、化学晶界分析和各种电学器件测量对 RT-CVD 石墨烯的性能进行了仔细表征,结果表明其具有优异的均匀性和稳定性。特别是,我们发现石墨烯畴尺寸与电导率之间没有显著相关性,这与之前对纳米级石墨烯畴的理论预期不同。最后,展示了 RT-CVD 薄膜在最先进的手机中安装的电容式多点触控设备中的实际应用。