Sun Dongyun, Wang Wei, Liu Zhaoping
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences Ningbo Zhejiang 315201 P. R. China
Nano Science and Technology Institute, University of Science and Technology of China China.
RSC Adv. 2018 May 30;8(35):19846-19851. doi: 10.1039/c8ra02478b. eCollection 2018 May 25.
Graphene films grown by the chemical vapor deposition (CVD) method have attracted intensive attention due to their native advantages of both high quality and large quantity for commercial applications. However, previously reported graphene films have exhibited uncertain and conflicted electrical properties that greatly hinder them from being used to build reliable electrical devices because of incompatibility during the complex and multifarious transfer process. Herein, the relationship between the transfer parameters and electrical performance was systematically studied. It demonstrates that cracking during the transfer process causes significant loss of carrier mobility and hence an increase in sheet resistance. Additionally, unstable doping plays a key role in the carrier density and hence greatly influences the sheet resistance. By introducing HCl as a doping agent, graphene films with repeated sheet resistance of approximately 300 ohm sq can be realized. This work establishes a facile and reliable route to fabricate graphene films with advanced and repeatable electrical properties, which is significant and essential for fair evaluation of CVD-grown graphene films and further practical applications.
通过化学气相沉积（CVD）法生长的石墨烯薄膜因其在商业应用中高质量和大量生产的固有优势而备受关注。然而，先前报道的石墨烯薄膜表现出不确定且相互矛盾的电学性能，由于在复杂多样的转移过程中存在不相容性，这极大地阻碍了它们用于构建可靠的电子器件。在此，系统地研究了转移参数与电学性能之间的关系。结果表明，转移过程中的开裂会导致载流子迁移率显著损失，从而导致方阻增加。此外，不稳定的掺杂在载流子密度中起关键作用，因此对方阻有很大影响。通过引入HCl作为掺杂剂，可以实现方阻约为300 ohm sq的可重复石墨烯薄膜。这项工作建立了一种简便可靠的方法来制备具有先进且可重复电学性能的石墨烯薄膜，这对于公平评估CVD生长的石墨烯薄膜以及进一步的实际应用具有重要意义。
