Dubau Martin, Lavková Jaroslava, Khalakhan Ivan, Haviar Stanislav, Potin Valerie, Matolín Vladimír, Matolínová Iva
Department of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University in Prague , V Holešovičkách 2, 180 00 Prague 8, Czech Republic.
ACS Appl Mater Interfaces. 2014 Jan 22;6(2):1213-8. doi: 10.1021/am4049546. Epub 2014 Jan 8.
The study focuses on preparation of thin cerium oxide films with a porous structure prepared by rf magnetron sputtering on a silicon wafer substrate using amorphous carbon (a-C) and nitrogenated amorphous carbon films (CNx) as an interlayer. We show that the structure and morphology of the deposited layers depend on the oxygen concentration in working gas used for cerium oxide deposition. Considerable erosion of the carbonaceous interlayer accompanied by the formation of highly porous carbon/cerium oxide bilayer systems is reported. Etching of the carbon interlayer with oxygen species occurring simultaneously with cerium oxide film growth is considered to be the driving force for this effect resulting in the formation of nanostructured cerium oxide films with large surface. In this regard, results of oxygen plasma treatment of a-C and CNx films are presented. Gradual material erosion with increasing duration of plasma impact accompanied by modification of the surface roughness is reported for both types of films. The CNx films were found to be much less resistant to oxygen etching than the a-C film.
该研究聚焦于通过射频磁控溅射在硅片衬底上制备具有多孔结构的氧化铈薄膜，使用非晶碳（a-C）和含氮非晶碳薄膜（CNx）作为中间层。我们表明，沉积层的结构和形态取决于用于氧化铈沉积的工作气体中的氧浓度。据报道，含碳中间层受到相当程度的侵蚀，同时形成了高度多孔的碳/氧化铈双层体系。在氧化铈薄膜生长的同时，碳中间层被氧物种蚀刻被认为是产生这种效应的驱动力，从而形成具有大表面积的纳米结构氧化铈薄膜。在这方面，展示了对a-C和CNx薄膜进行氧等离子体处理的结果。对于这两种类型的薄膜，都报道了随着等离子体冲击持续时间的增加，材料逐渐被侵蚀，同时表面粗糙度发生改变。发现CNx薄膜比a-C薄膜对氧蚀刻的抵抗力要小得多。
