Nanotechnology. 2014 Jan 31;25(4):045707. doi: 10.1088/0957-4484/25/4/045707.
Achieving strong adhesion between graphene and SiO(x)/Si substrates is crucial to make reliable graphene based electronics and electro-optic devices. We report the enhanced adhesion energy by vacuum annealing and the quantification of graphene-SiO(x)/Si substrate adhesion energy by using the nano-scratch technique coupled with Raman spectroscopy and x-ray photoelectron spectroscopy (XPS). We found that the adhesion energy of as-transferred graphene on SiO(x)/Si substrates is ~2.978 J m(-2). By applying different annealing protocols of rapid thermal annealing and vacuum annealing, the adhesion energy of graphene-SiO(x)/Si is increased to 10.09 and 20.64 J m(-2), respectively. The increase in adhesion energy is due to the formation of chemical bonds between the graphene and SiO(x) at high temperatures. The XPS depth profiling confirms that C-O and C=O chemical bond formation occurs at the graphene/SiO(x) interface. These results could be adapted for graphene/Si nanoelectronics device fabrication and they open up a pathway towards producing reliable solid state devices.
实现石墨烯与 SiO(x)/Si 衬底之间的牢固附着对于制造可靠的基于石墨烯的电子和光电设备至关重要。我们通过真空退火提高了附着能，并通过纳米划痕技术结合拉曼光谱和 X 射线光电子能谱（XPS）定量测量了石墨烯-SiO(x)/Si 衬底的附着能。我们发现，原始转移的石墨烯在 SiO(x)/Si 衬底上的附着能约为 2.978 J m(-2)。通过应用不同的退火方案，如快速热退火和真空退火，石墨烯-SiO(x)/Si 的附着能分别增加到 10.09 和 20.64 J m(-2)。附着能的增加归因于在高温下石墨烯与 SiO(x) 之间形成化学键。XPS 深度剖析证实了在石墨烯/SiO(x) 界面处形成 C-O 和 C=O 化学键。这些结果可适用于石墨烯/Si 纳米电子器件的制造，为制造可靠的固态器件开辟了途径。
