Burrows Christopher W, Dobbie Andrew, Myronov Maksym, Hase Thomas P A, Wilkins Stuart B, Walker Marc, Mudd James J, Maskery Ian, Lees Martin R, McConville Christopher F, Leadley David R, Bell Gavin R
Department of Physics, University of Warwick , Coventry, CV4 7AL, United Kingdom.
Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory , Upton, New York 11973-5000, United States.
Cryst Growth Des. 2013 Nov 6;13(11):4923-4929. doi: 10.1021/cg4011136. Epub 2013 Oct 29.
Molecular beam epitaxial growth of ferromagnetic MnSb(0001) has been achieved on high quality, fully relaxed Ge(111)/Si(111) virtual substrates grown by reduced pressure chemical vapor deposition. The epilayers were characterized using reflection high energy electron diffraction, synchrotron hard X-ray diffraction, X-ray photoemission spectroscopy, and magnetometry. The surface reconstructions, magnetic properties, crystalline quality, and strain relaxation behavior of the MnSb films are similar to those of MnSb grown on GaAs(111). In contrast to GaAs substrates, segregation of substrate atoms through the MnSb film does not occur, and alternative polymorphs of MnSb are absent.
已通过减压化学气相沉积法在高质量、完全弛豫的Ge(111)/Si(111)虚拟衬底上实现了铁磁MnSb(0001)的分子束外延生长。使用反射高能电子衍射、同步辐射硬X射线衍射、X射线光电子能谱和磁力测量对外延层进行了表征。MnSb薄膜的表面重构、磁性、晶体质量和应变弛豫行为与在GaAs(111)上生长的MnSb相似。与GaAs衬底不同，衬底原子不会通过MnSb薄膜发生偏析，并且不存在MnSb的替代多晶型物。
