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半导体铁磁体（GaSb）（MnSb）合金的高温磁性与微观结构

High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb) (MnSb) alloy.

作者信息

Oveshnikov Leonid N, Nekhaeva Elena I, Kochura Alexey V, Davydov Alexander B, Shakhov Mikhail A, Marenkin Sergey F, Novodvorskii Oleg A, Kuzmenko Alexander P, Vasiliev Alexander L, Aronzon Boris A, Lahderanta Erkki

机构信息

National Research Center "Kurchatov Institute", 123182 Moscow, Russian Federation.

P.N. Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow, Russian Federation.

出版信息

Beilstein J Nanotechnol. 2018 Sep 14;9:2457-2465. doi: 10.3762/bjnano.9.230. eCollection 2018.

DOI:10.3762/bjnano.9.230
PMID:30254840
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6142748/
Abstract

We have studied the properties of relatively thick (about 120 nm) magnetic composite films grown by pulsed laser deposition using the eutectic compound (GaSb)(MnSb) as target for sputtering. For the studied films we have observed ferromagnetism and an anomalous Hall effect above room temperature, confirming the presence of spin-polarized carriers. Electron microscopy, atomic and magnetic force microscopy results suggest that the films under study have a homogenous columnar structure in the bulk while MnSb inclusions accumulate near the surface. This is in good agreement with the high mobility values of charge carriers. Based on our data we conclude that the magnetic and magnetotransport properties of the films at room temperature are defined by the MnSb inclusions.

摘要

我们研究了通过脉冲激光沉积生长的相对较厚（约120纳米）的磁性复合薄膜的特性，该薄膜使用共晶化合物（GaSb）（MnSb）作为溅射靶材。对于所研究的薄膜，我们观察到了高于室温的铁磁性和反常霍尔效应，证实了自旋极化载流子的存在。电子显微镜、原子力显微镜和磁力显微镜的结果表明，所研究的薄膜整体具有均匀的柱状结构，而MnSb夹杂物在表面附近聚集。这与电荷载流子的高迁移率值非常吻合。基于我们的数据，我们得出结论，薄膜在室温下的磁性和磁输运特性由MnSb夹杂物决定。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/70ef/6142748/17fc7ff70601/Beilstein_J_Nanotechnol-09-2457-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/70ef/6142748/a59e644b6136/Beilstein_J_Nanotechnol-09-2457-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/70ef/6142748/07e29f7e9448/Beilstein_J_Nanotechnol-09-2457-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/70ef/6142748/0cd65280d607/Beilstein_J_Nanotechnol-09-2457-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/70ef/6142748/35599ab595cd/Beilstein_J_Nanotechnol-09-2457-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/70ef/6142748/9b99150e6ff1/Beilstein_J_Nanotechnol-09-2457-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/70ef/6142748/17fc7ff70601/Beilstein_J_Nanotechnol-09-2457-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/70ef/6142748/a59e644b6136/Beilstein_J_Nanotechnol-09-2457-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/70ef/6142748/07e29f7e9448/Beilstein_J_Nanotechnol-09-2457-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/70ef/6142748/0cd65280d607/Beilstein_J_Nanotechnol-09-2457-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/70ef/6142748/35599ab595cd/Beilstein_J_Nanotechnol-09-2457-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/70ef/6142748/9b99150e6ff1/Beilstein_J_Nanotechnol-09-2457-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/70ef/6142748/17fc7ff70601/Beilstein_J_Nanotechnol-09-2457-g007.jpg

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