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用于高性能光开关的硫化铅量子点/多壁碳纳米管的层状纳米结构组件。

A layer-nanostructured assembly of PbS quantum dot/multiwalled carbon nanotube for a high-performance photoswitch.

作者信息

Feng Wei, Qin Chengqun, Shen Yongtao, Li Yu, Luo Wen, An Haoran, Feng Yiyu

机构信息

School of Materials Science and Engineering, Tianjin Key Laboratory of Composite and Functional Materials, Tianjin University, Tianjin 300072, China.

出版信息

Sci Rep. 2014 Jan 21;4:3777. doi: 10.1038/srep03777.

Abstract

A layered nanostructure of a lead sulfide (PbS) quantum dot (QD)/multi-walled carbon nanotube (MWNT) hybrid was prepared by the electrostatic assembly after the phase transfer of PbS QDs from an organic to an aqueous phase. Well-crystallized PbS QDs with a narrow diameter (5.5 nm) was mono-dispersed on the sidewalls of MWNT by the electrostatic adsorption. Near-infrared absorption of PbS/MWNT nanostructures was improved and controlled by the packing density of PbS QDs. Efficient charge transfer between PbS and MWNT at the interface resulted in a remarkable quenching of photoluminescence up to 28.6% and a blue-shift of emission band by 300 nm. This feature was facilitated by band energy levels based on the intimate contact through the electrostatic interaction. Two-terminal devices using PbS/MWNT nanostructures showed an excellent on/off switching photocurrent and good stability during 20 cycles under light illumination due to electron transfer from PbS to MWNT. The photoswitch exhibited a high photo sensitivity up to 31.3% with the photocurrent of 18.3 μA under the light of 3.85 mW/cm(2), which outperformed many QD/carbon-based nanocomposites. Results indicate that the electrostatic layered assembly of QD/MWNT nanostructure is an excellent platform for the fabrication of high-performance optoelectronic devices.

摘要

在硫化铅(PbS)量子点(QD)从有机相转移到水相后,通过静电组装制备了硫化铅量子点/多壁碳纳米管(MWNT)杂化的层状纳米结构。直径窄(5.5纳米)且结晶良好的PbS量子点通过静电吸附单分散在MWNT的侧壁上。PbS/MWNT纳米结构的近红外吸收通过PbS量子点的堆积密度得到改善和控制。PbS和MWNT在界面处的有效电荷转移导致光致发光显著猝灭达28.6%,发射带蓝移300纳米。基于通过静电相互作用的紧密接触的能带能级促进了这一特性。使用PbS/MWNT纳米结构的两端器件在光照下20个循环期间表现出优异的开/关切换光电流和良好的稳定性,这是由于电子从PbS转移到MWNT。该光开关在3.85 mW/cm(2)的光照下具有高达31.3%的高光敏性,光电流为18.3 μA,优于许多量子点/碳基纳米复合材料。结果表明,量子点/多壁碳纳米管纳米结构的静电层状组装是制造高性能光电器件的优异平台。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6ff6/3896909/0b3531d21795/srep03777-f1.jpg

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