Laboratoire de Physique des Solides, Université Paris-Sud, CNRS, UMR8502, 91405 Orsay, France.
Laboratoire de Physique des Solides, Université Paris-Sud, CNRS, UMR8502, 91405 Orsay, France and Laboratoire de Photonique et de Nanostructures, CNRS, UPR 20, 91460 Marcoussis, France and Consejo Nacional de Investigaciones Científicas y Técnicas, Centro Atómico Bariloche-Comisíon Nacional de Energía Atómica, Avenida Bustillo 9500, 8400 San Carlos de Bariloche, Río Negro, Argentina.
Phys Rev Lett. 2014 Jan 17;112(2):026601. doi: 10.1103/PhysRevLett.112.026601. Epub 2014 Jan 14.
We show experimental evidence of magnetization switching in a single (Ga,Mn)(As,P) semiconducting ferromagnetic layer, attributed to a strong reduction of the magnetization and the anisotropy due to current injection. The nucleation of magnetization reversal is found to occur even in the absence of a magnetic field and to be both anisotropic and stochastic. Our findings highlight a new mechanism of magnetization manipulation based on spin accumulation in a semiconductor material.
我们展示了在单个（Ga,Mn）（As,P）半导体铁磁层中磁化翻转的实验证据，这归因于电流注入导致的磁化和各向异性的强烈减小。即使在没有磁场的情况下，也发现了磁化反转的成核，并且具有各向异性和随机性。我们的发现强调了一种基于半导体材料中自旋积累的新的磁化操控机制。
