Chiba D, Sato Y, Kita T, Matsukura F, Ohno H
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan.
Phys Rev Lett. 2004 Nov 19;93(21):216602. doi: 10.1103/PhysRevLett.93.216602. Epub 2004 Nov 18.
Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular 1.5 x 0.3 microm2 device revealed that magnetization switching occurs at low critical current densities of 1.1-2.2 x 10(5) A/cm2 despite the presence of spin-orbit interaction in the p-type semiconductor system. Possible mechanisms responsible for the effect are discussed.
在30 K温度下，演示了基于铁磁半导体的(Ga,Mn)As/GaAs/(Ga,Mn)As磁性隧道结中的电流驱动磁化反转。在一个1.5×0.3微米²的矩形器件上进行磁阻测量并施加电流脉冲，结果表明，尽管p型半导体系统中存在自旋轨道相互作用，但在1.1 - 2.2×10⁵ A/cm²的低临界电流密度下仍会发生磁化切换。讨论了导致该效应的可能机制。
