• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

高 Tc 完全补偿亚铁磁半导体作为自旋过滤材料:CrVXAl(X = Ti、Zr、Hf)Heusler 化合物的情况。

High-T C fully compensated ferrimagnetic semiconductors as spin-filter materials: the case of CrVXAl (X = Ti, Zr, Hf) Heusler compounds.

机构信息

Department of Materials Science, School of Natural Sciences, University of Patras, Patras 26504, Greece.

出版信息

J Phys Condens Matter. 2014 Feb 26;26(8):086003. doi: 10.1088/0953-8984/26/8/086003. Epub 2014 Feb 6.

DOI:10.1088/0953-8984/26/8/086003
PMID:24501208
Abstract

We extend our recent work on spin-filter materials (Galanakis et al 2013 Appl. Phys. Lett.103 142404) to the case of CrVXAl (X = Ti, Zr, Hf) compounds, for which, using ab initio electronic structure calculations, we show that p-d hybridization leads to the formation of a fully compensated ferrimagnetic semiconducting state with moderate exchange splitting. The magnetism is of covalent-type and the very strong antiferromagnetic Cr-V exchange interactions lead to extremely high Curie temperature, TC, values. Furthermore, all three compounds are thermodynamically and magnetically stable. The combination of very high TC values with a zero total net magnetization makes them promising materials for spintronics applications.

摘要

我们将最近关于自旋过滤材料的工作(Galanakis 等人,2013 年,应用物理快报,103,142404)扩展到 CrVXAl(X = Ti,Zr,Hf)化合物的情况,通过使用第一性原理电子结构计算,我们表明 p-d 杂化导致完全补偿的铁磁半导体态的形成,具有中等的交换劈裂。磁性为共价型,非常强的反铁磁 Cr-V 交换相互作用导致极高的居里温度 TC 值。此外,这三种化合物在热力学和磁学上都是稳定的。极高的 TC 值与零总净磁化强度的结合使它们成为自旋电子学应用的有前途的材料。

相似文献

1
High-T C fully compensated ferrimagnetic semiconductors as spin-filter materials: the case of CrVXAl (X = Ti, Zr, Hf) Heusler compounds.高 Tc 完全补偿亚铁磁半导体作为自旋过滤材料:CrVXAl(X = Ti、Zr、Hf)Heusler 化合物的情况。
J Phys Condens Matter. 2014 Feb 26;26(8):086003. doi: 10.1088/0953-8984/26/8/086003. Epub 2014 Feb 6.
2
Prediction of fully compensated ferrimagnetic spin-gapless semiconducting FeMnGa/Al/In half Heusler alloys.完全补偿亚铁磁自旋无隙半导体FeMnGa/Al/In半赫斯勒合金的预测
IUCrJ. 2019 May 9;6(Pt 4):610-618. doi: 10.1107/S2052252519005062. eCollection 2019 Jul 1.
3
Ab initio prediction of ferrimagnetism, exchange interactions and Curie temperatures in Mn₂TiZ Heusler compounds.从头预测 Mn₂TiZ 型 Heusler 化合物中的亚铁磁性、交换相互作用和居里温度。
J Phys Condens Matter. 2011 Jan 26;23(3):036001. doi: 10.1088/0953-8984/23/3/036001. Epub 2010 Dec 21.
4
Compensated Ferrimagnetic Tetragonal Heusler Thin Films for Antiferromagnetic Spintronics.补偿型亚铁磁四方 Heusler 薄膜在反铁磁自旋电子学中的应用。
Adv Mater. 2016 Oct;28(38):8499-8504. doi: 10.1002/adma.201602963. Epub 2016 Aug 8.
5
First-principles investigation on the transport properties of quaternary CoFeRGa (R = Ti, V, Cr, Mn, Cu, and Nb) Heusler compounds.四元CoFeRGa(R = Ti、V、Cr、Mn、Cu和Nb)赫斯勒化合物输运性质的第一性原理研究。
Phys Chem Chem Phys. 2020 Oct 21;22(40):23185-23194. doi: 10.1039/d0cp03226c.
6
Crystal and electronic structure and magnetic properties of divalent europium perovskite oxides EuMO3 (M = Ti, Zr, and Hf): experimental and first-principles approaches.钙钛矿型二价铕氧化物 EuMO3(M = Ti、Zr 和 Hf)的晶体和电子结构与磁性:实验和第一性原理研究。
Inorg Chem. 2012 Apr 16;51(8):4560-7. doi: 10.1021/ic2024567. Epub 2012 Apr 2.
7
Electronic structure, magnetic properties and electrical resistivity of the Fe(2)V(1-x)Ti(x)Al Heusler alloys: experiment and calculation.Fe(2)V(1 - x)Ti(x)Al 赫斯勒合金的电子结构、磁性和电阻率:实验与计算
J Phys Condens Matter. 2006 Nov 22;18(46):10319-34. doi: 10.1088/0953-8984/18/46/002. Epub 2006 Nov 1.
8
Design of compensated ferrimagnetic Heusler alloys for giant tunable exchange bias.补偿型亚铁磁 Heusler 合金的设计用于可调谐巨交换偏置。
Nat Mater. 2015 Jul;14(7):679-84. doi: 10.1038/nmat4248. Epub 2015 Mar 16.
9
Systematic study on the electronic structure and mechanical properties of X2BC (X = Mo, Ti, V, Zr, Nb, Hf, Ta and W).X2BC(X = Mo、Ti、V、Zr、Nb、Hf、Ta 和 W)的电子结构和力学性能的系统研究。
J Phys Condens Matter. 2013 Jan 30;25(4):045501. doi: 10.1088/0953-8984/25/4/045501. Epub 2012 Dec 20.
10
Polarization reduction in half-metallic Heusler alloys: the effect of point defects and interfaces with semiconductors.半金属赫斯勒合金中的极化降低:点缺陷及与半导体界面的影响。
J Phys Condens Matter. 2007 Aug 8;19(31):315215. doi: 10.1088/0953-8984/19/31/315215. Epub 2007 Jul 4.

引用本文的文献

1
Half metal-to-metal transition and superior transport response with a very high Curie-temperature in CoFeRuSn: strain regulations.CoFeRuSn中的半金属-金属转变及具有非常高居里温度的优异输运响应:应变调控
RSC Adv. 2025 Apr 11;15(15):11511-11522. doi: 10.1039/d5ra01305d. eCollection 2025 Apr 9.
2
High Spin Magnetic Moments in All-3-Metallic Co-Based Full Heusler Compounds.全3金属钴基富勒烯化合物中的高自旋磁矩。
Materials (Basel). 2023 Dec 7;16(24):7543. doi: 10.3390/ma16247543.
3
Slater-Pauling Behavior in Half-Metallic Heusler Compounds.
半金属赫斯勒化合物中的斯莱特-泡利行为。
Nanomaterials (Basel). 2023 Jul 5;13(13):2010. doi: 10.3390/nano13132010.
4
Computational prediction of the spin-polarized semiconductor equiatomic quaternary Heusler compound MnVZrP as a spin-filter.自旋极化半导体等原子四元赫斯勒化合物MnVZrP作为自旋过滤器的计算预测
RSC Adv. 2020 Jul 7;10(43):25609-25617. doi: 10.1039/d0ra04633g. eCollection 2020 Jul 3.
5
Pressure dependent half-metallic ferromagnetism in inverse Heusler alloy FeCoAl: a DFT+U calculations.反赫斯勒合金FeCoAl中压力依赖的半金属铁磁性:密度泛函理论+U计算
RSC Adv. 2020 Dec 17;10(73):44633-44640. doi: 10.1039/d0ra07543d.
6
Prediction of fully compensated ferrimagnetic spin-gapless semiconducting FeMnGa/Al/In half Heusler alloys.完全补偿亚铁磁自旋无隙半导体FeMnGa/Al/In半赫斯勒合金的预测
IUCrJ. 2019 May 9;6(Pt 4):610-618. doi: 10.1107/S2052252519005062. eCollection 2019 Jul 1.
7
Rare earth-based quaternary Heusler compounds CoV ( = Lu, Y; = Si, Ge) with tunable band characteristics for potential spintronic applications.具有可调节能带特性的稀土基四元赫斯勒化合物CoV( = 镥、钇; = 硅、锗)在自旋电子学潜在应用中的研究
IUCrJ. 2017 Oct 6;4(Pt 6):758-768. doi: 10.1107/S2052252517013264. eCollection 2017 Nov 1.