• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

具有可调节能带特性的稀土基四元赫斯勒化合物CoV( = 镥、钇; = 硅、锗)在自旋电子学潜在应用中的研究

Rare earth-based quaternary Heusler compounds CoV ( = Lu, Y; = Si, Ge) with tunable band characteristics for potential spintronic applications.

作者信息

Wang Xiaotian, Cheng Zhenxiang, Liu Guodong, Dai Xuefang, Khenata Rabah, Wang Liying, Bouhemadou Abdelmadjid

机构信息

School of Physical Science and Technology, Southwest University, Chongqing 400715, People's Republic of China.

Institute for Superconducting and Electronic Materials (ISEM), University of Wollongong, Wollongong 2500, Australia.

出版信息

IUCrJ. 2017 Oct 6;4(Pt 6):758-768. doi: 10.1107/S2052252517013264. eCollection 2017 Nov 1.

DOI:10.1107/S2052252517013264
PMID:29123678
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5668861/
Abstract

Magnetic Heusler compounds (MHCs) have recently attracted great attention since these types of material provide novel functionalities in spintronic and magneto-electronic devices. Among the MHCs, some compounds have been predicted to be spin-filter semiconductors [also called magnetic semiconductors (MSs)], spin-gapless semiconductors (SGSs) or half-metals (HMs). In this work, by means of first-principles calculations, it is demonstrated that rare earth-based equiatomic quaternary Heusler (EQH) compounds with the formula CoV ( = Lu, Y; = Si, Ge) are new spin-filter semiconductors with total magnetic moments of 3 µ. Furthermore, under uniform strain, there are physical transitions from spin-filter semiconductor (MS) → SGS → HM for EQH compounds with the formula LuCoV, and from HM → SGS → MS → SGS → HM for EQH compounds with the formula YCoV. Remarkably, for YCoV EQH compounds there are not only diverse physical transitions, but also different types of spin-gapless feature that can be observed with changing lattice constants. The structural stability of these four EQH compounds is also examined from the points of view of formation energy, cohesive energy and mechanical behaviour. This work is likely to inspire consideration of rare earth-based EQH compounds for application in future spintronic and magneto-electronic devices.

摘要

磁性休斯勒化合物(MHCs)近来备受关注,因为这类材料在自旋电子器件和磁电子器件中展现出了新颖的功能特性。在MHCs中,一些化合物被预测为自旋过滤半导体(也称为磁性半导体(MSs))、自旋无隙半导体(SGSs)或半金属(HMs)。在这项工作中,通过第一性原理计算表明,化学式为CoV ( = Lu,Y; = Si,Ge)的稀土基等原子四元休斯勒(EQH)化合物是新的自旋过滤半导体,其总磁矩为3 µ。此外,在均匀应变下,化学式为LuCoV的EQH化合物存在从自旋过滤半导体(MS)→SGS→HM的物理转变,而化学式为YCoV的EQH化合物则存在从HM→SGS→MS→SGS→HM的物理转变。值得注意的是,对于YCoV EQH化合物,不仅存在多样的物理转变,而且随着晶格常数的变化还能观察到不同类型的自旋无隙特性。还从形成能、内聚能和力学行为的角度考察了这四种EQH化合物的结构稳定性。这项工作可能会激发人们考虑将稀土基EQH化合物应用于未来的自旋电子器件和磁电子器件。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5d93/5668861/1bdd6c7e50fc/m-04-00758-fig9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5d93/5668861/f85798946a56/m-04-00758-fig1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5d93/5668861/f93ee4a9dd72/m-04-00758-fig2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5d93/5668861/2a0dfb66f0fa/m-04-00758-fig3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5d93/5668861/55f359661f96/m-04-00758-fig4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5d93/5668861/9f1c03638c27/m-04-00758-fig5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5d93/5668861/5e4e1c026c3f/m-04-00758-fig6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5d93/5668861/b3eeb4394b09/m-04-00758-fig7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5d93/5668861/2a4e74e35a01/m-04-00758-fig8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5d93/5668861/1bdd6c7e50fc/m-04-00758-fig9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5d93/5668861/f85798946a56/m-04-00758-fig1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5d93/5668861/f93ee4a9dd72/m-04-00758-fig2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5d93/5668861/2a0dfb66f0fa/m-04-00758-fig3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5d93/5668861/55f359661f96/m-04-00758-fig4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5d93/5668861/9f1c03638c27/m-04-00758-fig5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5d93/5668861/5e4e1c026c3f/m-04-00758-fig6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5d93/5668861/b3eeb4394b09/m-04-00758-fig7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5d93/5668861/2a4e74e35a01/m-04-00758-fig8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5d93/5668861/1bdd6c7e50fc/m-04-00758-fig9.jpg

相似文献

1
Rare earth-based quaternary Heusler compounds CoV ( = Lu, Y; = Si, Ge) with tunable band characteristics for potential spintronic applications.具有可调节能带特性的稀土基四元赫斯勒化合物CoV( = 镥、钇; = 硅、锗)在自旋电子学潜在应用中的研究
IUCrJ. 2017 Oct 6;4(Pt 6):758-768. doi: 10.1107/S2052252517013264. eCollection 2017 Nov 1.
2
A first-principles study of rare earth quaternary Heusler compounds: RXVZ (R = Yb, Lu; X = Fe, Co, Ni; Z = Al, Si).稀土四元赫斯勒化合物RXVZ(R = Yb,Lu;X = Fe,Co,Ni;Z = Al,Si)的第一性原理研究
Phys Chem Chem Phys. 2021 Jan 28;23(3):2264-2274. doi: 10.1039/d0cp05191h.
3
Highly spin-polarized electronic structure and magnetic properties of MnCoAl Ge Heusler alloys: first-principles calculations.MnCoAl Ge 赫斯勒合金的高自旋极化电子结构和磁性:第一性原理计算
RSC Adv. 2020 Jun 12;10(38):22556-22569. doi: 10.1039/d0ra03413d. eCollection 2020 Jun 10.
4
Computational prediction of the spin-polarized semiconductor equiatomic quaternary Heusler compound MnVZrP as a spin-filter.自旋极化半导体等原子四元赫斯勒化合物MnVZrP作为自旋过滤器的计算预测
RSC Adv. 2020 Jul 7;10(43):25609-25617. doi: 10.1039/d0ra04633g. eCollection 2020 Jul 3.
5
Spin-Gapless Semiconductors.自旋无隙半导体
Small. 2020 Aug;16(31):e1905155. doi: 10.1002/smll.201905155. Epub 2020 Jun 11.
6
Strain robust spin gapless semiconductors/half-metals in transition metal embedded MoSemonolayer.过渡金属嵌入的MoSe单层中的应变鲁棒自旋无隙半导体/半金属
J Phys Condens Matter. 2020 Jun 17;32(36). doi: 10.1088/1361-648X/ab9052.
7
Lattice Dynamics, Mechanical Properties, Electronic Structure and Magnetic Properties of Equiatomic Quaternary Heusler Alloys CrTiCoZ (Z = Al, Si) Using First Principles Calculations.基于第一性原理计算的等原子四元赫斯勒合金CrTiCoZ(Z = Al,Si)的晶格动力学、力学性能、电子结构和磁性
Materials (Basel). 2022 Apr 26;15(9):3128. doi: 10.3390/ma15093128.
8
Disordered spin gapless semiconducting CoFeCrGa Heusler alloy thin films on Si (100): experiment and theory.无序自旋能隙无带隙 CoFeCrGa 半赫斯勒合金硅(100)薄膜:实验与理论。
Nanoscale. 2022 Dec 22;15(1):337-349. doi: 10.1039/d2nr03424g.
9
First-principles investigation on the transport properties of quaternary CoFeRGa (R = Ti, V, Cr, Mn, Cu, and Nb) Heusler compounds.四元CoFeRGa(R = Ti、V、Cr、Mn、Cu和Nb)赫斯勒化合物输运性质的第一性原理研究。
Phys Chem Chem Phys. 2020 Oct 21;22(40):23185-23194. doi: 10.1039/d0cp03226c.
10
Theoretical prediction of strain tuneable quaternary spintronic Heusler compounds.应变可调谐四元自旋电子赫斯勒化合物的理论预测
IUCrJ. 2017 Oct 27;4(Pt 6):712-713. doi: 10.1107/S2052252517015299. eCollection 2017 Nov 1.

引用本文的文献

1
Theoretical insights into the structural, optoelectronic, thermoelectric, and thermodynamic behavior of novel quaternary LiZrCoX (X = Ge, Sn) compounds based on first-principles study.基于第一性原理研究对新型四元LiZrCoX(X = Ge,Sn)化合物的结构、光电、热电和热力学行为的理论见解。
RSC Adv. 2023 Oct 10;13(42):29522-29535. doi: 10.1039/d3ra03815g. eCollection 2023 Oct 4.
2
Two-dimensional spin-gapless semiconductors: A mini-review.二维自旋无隙半导体:一篇综述。
Front Chem. 2022 Aug 25;10:996344. doi: 10.3389/fchem.2022.996344. eCollection 2022.
3
Computational prediction of the spin-polarized semiconductor equiatomic quaternary Heusler compound MnVZrP as a spin-filter.

本文引用的文献

1
New quaternary half-metallic ferromagnets with large Curie temperatures.具有高居里温度的新型四元半金属铁磁体。
Sci Rep. 2017 May 11;7(1):1803. doi: 10.1038/s41598-017-01782-5.
2
NMR Evidence for the Topologically Nontrivial Nature in a Family of Half-Heusler Compounds.核磁共振证据表明一类半赫斯勒化合物具有拓扑非平凡性质。
Sci Rep. 2016 Mar 16;6:23172. doi: 10.1038/srep23172.
3
Effect of boron doping on nanostructure and magnetism of rapidly quenched ZrCo-based alloys.硼掺杂对快速淬火ZrCo基合金纳米结构和磁性的影响。
自旋极化半导体等原子四元赫斯勒化合物MnVZrP作为自旋过滤器的计算预测
RSC Adv. 2020 Jul 7;10(43):25609-25617. doi: 10.1039/d0ra04633g. eCollection 2020 Jul 3.
4
Effect of Zn doping on phase transition and electronic structures of Heusler-type PdCr-based alloys: from normal to all-d-metal Heusler.锌掺杂对赫斯勒型钯铬基合金的相变和电子结构的影响:从常规赫斯勒到全金属赫斯勒合金
RSC Adv. 2020 May 7;10(30):17829-17835. doi: 10.1039/d0ra02951c. eCollection 2020 May 5.
5
Structural configuration and tetragonal phase stability in the equiatomic quaternary Heusler compound TiZnMnSi.等原子四元赫斯勒化合物TiZnMnSi的结构构型与四方相稳定性
RSC Adv. 2020 Nov 1;10(65):39731-39738. doi: 10.1039/d0ra07652j. eCollection 2020 Oct 27.
6
Phase Transition and Electronic Structures of All--Metal Heusler-Type XMnTi Compounds (X = Pd, Pt, Ag, Au, Cu, and Ni).全金属赫斯勒型XMnTi化合物(X = Pd、Pt、Ag、Au、Cu和Ni)的相变与电子结构
Front Chem. 2020 Dec 11;8:546947. doi: 10.3389/fchem.2020.546947. eCollection 2020.
7
Computational Insights Into the Electronic Structure and Magnetic Properties of Rhombohedral Type Half-Metal GdMnO With Multiple Dirac-Like Band Crossings.对具有多个类狄拉克能带交叉的菱面体型半金属GdMnO的电子结构和磁性的计算洞察。
Front Chem. 2020 Jul 17;8:558. doi: 10.3389/fchem.2020.00558. eCollection 2020.
8
Synthesis, structure, magnetic and half-metallic properties of Co Ru MnSi ( = 0, 0.25, 0.5, 0.75, 1) compounds.CoRuMnSi(=0、0.25、0.5、0.75、1)化合物的合成、结构、磁性和半金属性质
IUCrJ. 2020 Jan 1;7(Pt 1):113-120. doi: 10.1107/S2052252519015641.
9
3-type LnNiO (Ln = La, Ce, Nd, Pm, Gd, Tb, Dy, Ho, Er, Lu) half-metals with multiple Dirac cones: a potential class of advanced spintronic materials.具有多个狄拉克锥的3型LnNiO(Ln = 镧、铈、钕、钷、钆、铽、镝、钬、铒、镥)半金属:一类潜在的先进自旋电子材料。
IUCrJ. 2019 Oct 16;6(Pt 6):990-995. doi: 10.1107/S2052252519012570. eCollection 2019 Nov 1.
10
Investigation of the structural competing and atomic ordering in Heusler compounds FeNiSi and NiFeSi under strain condition.Heusler化合物FeNiSi和NiFeSi在应变条件下的结构竞争与原子有序化研究。
R Soc Open Sci. 2019 Sep 11;6(9):191007. doi: 10.1098/rsos.191007. eCollection 2019 Sep.
AIP Adv. 2016 Feb 18;6(5):056002. doi: 10.1063/1.4942556. eCollection 2016 May.
4
High-T C fully compensated ferrimagnetic semiconductors as spin-filter materials: the case of CrVXAl (X = Ti, Zr, Hf) Heusler compounds.高 Tc 完全补偿亚铁磁半导体作为自旋过滤材料:CrVXAl(X = Ti、Zr、Hf)Heusler 化合物的情况。
J Phys Condens Matter. 2014 Feb 26;26(8):086003. doi: 10.1088/0953-8984/26/8/086003. Epub 2014 Feb 6.
5
Realization of spin gapless semiconductors: the Heusler compound Mn2CoAl.实现无能隙自旋半导体:Heusler 化合物 Mn2CoAl。
Phys Rev Lett. 2013 Mar 8;110(10):100401. doi: 10.1103/PhysRevLett.110.100401. Epub 2013 Mar 5.
6
Quaternary Heusler compounds Co(2-x)Rh(x)MnZ (Z = Ga, Sn, Sb): crystal structure, electronic structure, and magnetic properties.四元 Heusler 化合物 Co(2-x)Rh(x)MnZ (Z = Ga, Sn, Sb):晶体结构、电子结构和磁性能。
J Phys Condens Matter. 2012 Feb 1;24(4):046001. doi: 10.1088/0953-8984/24/4/046001. Epub 2012 Jan 4.
7
Proposal for a new class of materials: spin gapless semiconductors.关于一类新型材料的提议:自旋无隙半导体。
Phys Rev Lett. 2008 Apr 18;100(15):156404. doi: 10.1103/PhysRevLett.100.156404.
8
Spintronics: a spin-based electronics vision for the future.自旋电子学:面向未来的基于自旋的电子学愿景。
Science. 2001 Nov 16;294(5546):1488-95. doi: 10.1126/science.1065389.
9
Generalized Gradient Approximation Made Simple.广义梯度近似简化法
Phys Rev Lett. 1996 Oct 28;77(18):3865-3868. doi: 10.1103/PhysRevLett.77.3865.
10
First-principles theory of quasiparticles: Calculation of band gaps in semiconductors and insulators.准粒子的第一性原理理论:半导体和绝缘体中带隙的计算。
Phys Rev Lett. 1985 Sep 23;55(13):1418-1421. doi: 10.1103/PhysRevLett.55.1418.