Department of Nanotechnology, Ahar Branch, Islamic Azad University, Ahar 54515, Iran.
Department of Physics, Universiti Putra Malaysia, UPM Serdang 43400, Malaysia.
Sensors (Basel). 2014 Feb 6;14(2):2549-60. doi: 10.3390/s140202549.
A nanocrystalline SnO2 thin film was synthesized by a chemical bath method. The parameters affecting the energy band gap and surface morphology of the deposited SnO2 thin film were optimized using a semi-empirical method. Four parameters, including deposition time, pH, bath temperature and tin chloride (SnCl2·2H2O) concentration were optimized by a factorial method. The factorial used a Taguchi OA (TOA) design method to estimate certain interactions and obtain the actual responses. Statistical evidences in analysis of variance including high F-value (4,112.2 and 20.27), very low P-value (<0.012 and 0.0478), non-significant lack of fit, the determination coefficient (R2 equal to 0.978 and 0.977) and the adequate precision (170.96 and 12.57) validated the suggested model. The optima of the suggested model were verified in the laboratory and results were quite close to the predicted values, indicating that the model successfully simulated the optimum conditions of SnO2 thin film synthesis.
采用化学浴法合成了纳米 SnO2 薄膜。使用半经验方法优化了沉积 SnO2 薄膜的能带隙和表面形貌的参数。通过析因法优化了四个参数,包括沉积时间、pH 值、浴温和氯化锡(SnCl2·2H2O)浓度。析因采用田口 OA(TOA)设计方法来估计某些相互作用并获得实际响应。方差分析中的统计证据包括高 F 值(4、112.2 和 20.27)、非常低的 P 值(<0.012 和 0.0478)、无显著拟合不足、确定系数(R2 等于 0.978 和 0.977)和充分精度(170.96 和 12.57)验证了建议模型的有效性。建议模型的最佳条件在实验室中得到了验证,结果与预测值非常接近,表明该模型成功地模拟了 SnO2 薄膜合成的最佳条件。